2021 IEEE International Interconnect Technology Conference (IITC)最新文献_第8页

Unique nondestructive inline metrology of TSVs by X-ray with model based library method 基于模型库的x射线无损在线测量tsv的独特方法

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831877

Y. Umehara, Wen Jin

引用次数: 3

Atomic layer deposition of MnOx for Cu capping layer in Cu/low-k interconnects Cu/低钾互连中Cu覆盖层MnOx的原子层沉积

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831896

H. Kawasaki, Kenji Matsumoto, H. Nagai, Yuuki Kikuchi, Peng Chang

引用次数: 1

Alternative metals for advanced interconnects 用于高级互连的替代金属

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831863

C. Adelmann, L. Wen, A. Peter, Y. Siew, K. Croes, J. Swerts, M. Popovici, K. Sankaran, G. Pourtois, S. Van Elshocht, J. Bommels, Z. Tokei

引用次数: 63

Electroless Cu seed on Ru and Co liners in high aspect ratio TSV 高纵横比TSV中Ru和Co衬里化学镀铜

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831871

F. Inoue, H. Philipsen, M. H. van der Veen, S. Van Huylenbroeck, S. Armini, H. Struyf, T. Tanaka

引用次数: 4

2D vs 3D integration: Architecture-technology co-design for future mobile MPSoC platforms 2D vs 3D集成:未来移动MPSoC平台的架构-技术协同设计

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831839

Prashant Agrawal, D. Milojevic, P. Raghavan, F. Catthoor, L. Van der Perre, E. Beyne, R. Varadarajan

引用次数: 2

Advancements with carbon nanotube digital systems 碳纳米管数字系统的进展

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831897

M. Shulaker, G. Hills, Hai Wei, Hong-Yu Chen, N. Patil, H. Wong, S. Mitra

{"title":"Advancements with carbon nanotube digital systems","authors":"M. Shulaker, G. Hills, Hai Wei, Hong-Yu Chen, N. Patil, H. Wong, S. Mitra","doi":"10.1109/IITC.2014.6831897","DOIUrl":"https://doi.org/10.1109/IITC.2014.6831897","url":null,"abstract":"Carbon Nanotube FETs (CNFETs) are excellent candidates for the next generation of high-performance and energy-efficient electronics, as CNFET-based digital circuits are projected to potentially achieve an order of magnitude improvement in energy-delay product at highly scaled technology nodes. This paper presents an overview of the first demonstration of a computer implemented entirely using CNFETs. The CNT computer is capable of performing multitasking: as a demonstration, we perform counting and integer-sorting simultaneously. In addition, we emulate 20 different instructions from the commercial MIPS instruction set to demonstrate the generality of our CNT computer. This is the most complex carbon-based electronic system yet demonstrated. It is a considerable advance because CNTs are prominent among a variety of emerging technologies that are being considered for the next generation of highly energy-efficient electronic systems. In addition to performance and energy benefits, CNFETs also provide a unique opportunity to achieve monolithic three-dimensional (3D) integration through low-temperature CNFET processing. Monolithic 3D integration is an attractive technological option because it enables a very high density of Inter-Layer Vias compared to Through-Silicon Vias. A summary of monolithic 3D CNFET integrated circuit demonstrations will also be given.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"5 1","pages":"319-322"},"PeriodicalIF":0.0,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78844791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Impact of dimensional scaling and size effects on beyond CMOS All-Spin Logic interconnects 尺寸缩放和尺寸效应对超CMOS全自旋逻辑互连的影响

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831833

R. M. Iraei, P. Bonhomme, N. Kani, S. Manipatruni, D. Nikonov, I. Young, A. Naeemi

引用次数: 8

Moisture-assisted failure mechanisms in underfill epoxy/silicon systems for microelectronic packaging 微电子封装用环氧树脂/硅衬底系统的水分辅助失效机制

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831834

Marta Giachino, F. Paredes, N. Ananthakrishnan, S. Liff, R. Dauskardt

引用次数: 3

Reliability of ultra-porous low-k materials for advanced interconnects 用于先进互连的超多孔低k材料的可靠性

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831873

J. Plawsky, J. Borja, T. Lu, H. Bakhru, R. Rosenberg, W. Gill, T. Shaw, R. Laibowitz, E. Liniger, S. Cohen, G. Bonilla

{"title":"Reliability of ultra-porous low-k materials for advanced interconnects","authors":"J. Plawsky, J. Borja, T. Lu, H. Bakhru, R. Rosenberg, W. Gill, T. Shaw, R. Laibowitz, E. Liniger, S. Cohen, G. Bonilla","doi":"10.1109/IITC.2014.6831873","DOIUrl":"https://doi.org/10.1109/IITC.2014.6831873","url":null,"abstract":"Summary form only given. The reliability of new ultra-porous low-k materials is often a fascinating and complex tale involving multiple concepts from material science, electrical and chemical engineering. Pursuing an understanding of reliability for novel low-k materials requires the dissection of fundamental mechanisms and phenomena altering the electrical and physical properties of the dielectric matrix. Failure mechanisms can be categorized into two main groups. Intrinsic failure arises from damage to the dielectric matrix due to the transport of charge carriers. Ion catalyzed failure results from the drift of ionic species originating from the metal/dielectric interface. Integration of sub-20nm process technology nodes can be radically advanced by resolving how major failure mechanisms coexist and collaborate to generate dielectric failures. Here, we present a set of dynamic applied field experiments designed to identify changes in the conduction and reliability of dielectric films as result of bias and temperature stress (BTS). It is shown that ionic species originating from the metal/dielectric interface can behave as trapping centers for charge carriers under BTS. Trapping of electrons into ionic centers could increase the scattering of charge carriers which leads to the additional formation of intrinsic defects across the dielectric matrix, thus accelerating intrinsic failure. A mechanism is proposed to describe how leakage current decay at the onset of BTS is related to charge carrier confinement into intrinsic and ionic defects. The kinetics of charge trapping events were found to be consistent with a time-dependent reaction rate constant, k = k0 · (t + 1)β-1 where 0<;β<;1. This formulation leads to a classic, stretched exponential decay rate that we are looking to use to help predict dielectric reliability.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"12 1","pages":"217-218"},"PeriodicalIF":0.0,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89384885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interconnects scaling challenge for sub-20nm spin torque transfer magnetic random access memory technology 亚20nm自旋转矩转移磁随机存取存储器技术的互连缩放挑战

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI: 10.1109/IITC.2014.6831830

T. Min, Z. Tokei, G. Kar, S. Coseman, J. Bekaert, P. Raghavan, S. Cornelissen, Kaidong Xu, L. Souriau, D. Radisic, J. Swerts, T. Tahmasebi, S. Mertens

引用次数: 3