铜互连中的热应力控制

C. Yang, B. Li, F. Baumann, P. Wang, J. Li, R. Rosenberg, D. Edelstein
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引用次数: 0

摘要

在250°C的高温退火条件下,Cu互连线在低k介质中实现了晶粒的生长,没有出现应力消除的问题。为此,在热退火处理之前,在镀铜覆盖层表面沉积了一层TaN金属钝化层。与传统的100℃退火结构相比,钝化层使Cu晶粒在高温下进一步长大,从而增加了Cu晶粒尺寸,提高了Cu互连的电迁移电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal stress control in Cu interconnects
Grain growth of Cu interconnects in a low k dielectric was achieved at an elevated anneal temperature of 250 °C without stress voiding related problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface prior to the thermal annealing process. As compared to the conventional structure annealed at 100 °C, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance in the resulted Cu interconnects.
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