铜互连中的热应力控制

C. Yang, B. Li, F. Baumann, P. Wang, J. Li, R. Rosenberg, D. Edelstein
{"title":"铜互连中的热应力控制","authors":"C. Yang, B. Li, F. Baumann, P. Wang, J. Li, R. Rosenberg, D. Edelstein","doi":"10.1109/IITC.2014.6831888","DOIUrl":null,"url":null,"abstract":"Grain growth of Cu interconnects in a low k dielectric was achieved at an elevated anneal temperature of 250 °C without stress voiding related problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface prior to the thermal annealing process. As compared to the conventional structure annealed at 100 °C, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance in the resulted Cu interconnects.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"148 1","pages":"253-256"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermal stress control in Cu interconnects\",\"authors\":\"C. Yang, B. Li, F. Baumann, P. Wang, J. Li, R. Rosenberg, D. Edelstein\",\"doi\":\"10.1109/IITC.2014.6831888\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Grain growth of Cu interconnects in a low k dielectric was achieved at an elevated anneal temperature of 250 °C without stress voiding related problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface prior to the thermal annealing process. As compared to the conventional structure annealed at 100 °C, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance in the resulted Cu interconnects.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"148 1\",\"pages\":\"253-256\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2014.6831888\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在250°C的高温退火条件下,Cu互连线在低k介质中实现了晶粒的生长,没有出现应力消除的问题。为此,在热退火处理之前,在镀铜覆盖层表面沉积了一层TaN金属钝化层。与传统的100℃退火结构相比,钝化层使Cu晶粒在高温下进一步长大,从而增加了Cu晶粒尺寸,提高了Cu互连的电迁移电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal stress control in Cu interconnects
Grain growth of Cu interconnects in a low k dielectric was achieved at an elevated anneal temperature of 250 °C without stress voiding related problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface prior to the thermal annealing process. As compared to the conventional structure annealed at 100 °C, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance in the resulted Cu interconnects.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信