Cu/低钾互连中Cu覆盖层MnOx的原子层沉积

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI:10.1109/IITC.2014.6831896

H. Kawasaki, Kenji Matsumoto, H. Nagai, Yuuki Kikuchi, Peng Chang

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引用次数: 1

摘要

我们证明了原子层沉积(ALD)的锰氧化物(MnOx)的铜盖层。该工艺不仅可以提高电迁移性能，而且可以允许表面铜氧化。这将为化学机械抛光(CMP)后的时间和气氛管理提供方便。在这项研究中，我们证实了Mn(Ox)覆盖在Cu上而没有降低泄漏电流，并且通过简单的EM测试表明EM改善。

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Atomic layer deposition of MnOx for Cu capping layer in Cu/low-k interconnects

We demonstrated atomic layer deposition (ALD) of manganese oxide (MnOx) for Cu capping layer. This process is expected to have not only EM (electro-migration) improvement but also admissibility of surface Cu oxidation. That will provide easy time and atmosphere management after chemical mechanical polishing (CMP). In this study, we confirmed Mn(Ox) coverage on Cu without degradation of leakage current and indication of EM improvement with simple EM test.

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2021 IEEE International Interconnect Technology Conference (IITC)

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