{"title":"基于模型库的x射线无损在线测量tsv的独特方法","authors":"Y. Umehara, Wen Jin","doi":"10.1109/IITC.2014.6831877","DOIUrl":null,"url":null,"abstract":"Unique nondestructive inline profile metrology of through-Silicon via (TSV) for 3D integrated circuits in production processes such as ultra-deep etching and Cu pillar forming process was introduced. We tried to measure the depth profile of TSVs from X-ray images with a tilted angle by applying model based library method. The fairly good repeatability in critical dimensions (CDs) and the depths (<;100nm, <;200nm respectively) and good correlation in CDs with results from SEM measurement were obtained, and good robustness under low SNR ~2 of the images was confirmed.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Unique nondestructive inline metrology of TSVs by X-ray with model based library method\",\"authors\":\"Y. Umehara, Wen Jin\",\"doi\":\"10.1109/IITC.2014.6831877\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Unique nondestructive inline profile metrology of through-Silicon via (TSV) for 3D integrated circuits in production processes such as ultra-deep etching and Cu pillar forming process was introduced. We tried to measure the depth profile of TSVs from X-ray images with a tilted angle by applying model based library method. The fairly good repeatability in critical dimensions (CDs) and the depths (<;100nm, <;200nm respectively) and good correlation in CDs with results from SEM measurement were obtained, and good robustness under low SNR ~2 of the images was confirmed.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2014.6831877\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831877","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Unique nondestructive inline metrology of TSVs by X-ray with model based library method
Unique nondestructive inline profile metrology of through-Silicon via (TSV) for 3D integrated circuits in production processes such as ultra-deep etching and Cu pillar forming process was introduced. We tried to measure the depth profile of TSVs from X-ray images with a tilted angle by applying model based library method. The fairly good repeatability in critical dimensions (CDs) and the depths (<;100nm, <;200nm respectively) and good correlation in CDs with results from SEM measurement were obtained, and good robustness under low SNR ~2 of the images was confirmed.