C. Yang, B. Li, F. Baumann, P. Wang, J. Li, R. Rosenberg, D. Edelstein
{"title":"Thermal stress control in Cu interconnects","authors":"C. Yang, B. Li, F. Baumann, P. Wang, J. Li, R. Rosenberg, D. Edelstein","doi":"10.1109/IITC.2014.6831888","DOIUrl":null,"url":null,"abstract":"Grain growth of Cu interconnects in a low k dielectric was achieved at an elevated anneal temperature of 250 °C without stress voiding related problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface prior to the thermal annealing process. As compared to the conventional structure annealed at 100 °C, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance in the resulted Cu interconnects.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"148 1","pages":"253-256"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Grain growth of Cu interconnects in a low k dielectric was achieved at an elevated anneal temperature of 250 °C without stress voiding related problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface prior to the thermal annealing process. As compared to the conventional structure annealed at 100 °C, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance in the resulted Cu interconnects.