Thermal stress control in Cu interconnects

C. Yang, B. Li, F. Baumann, P. Wang, J. Li, R. Rosenberg, D. Edelstein
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Abstract

Grain growth of Cu interconnects in a low k dielectric was achieved at an elevated anneal temperature of 250 °C without stress voiding related problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface prior to the thermal annealing process. As compared to the conventional structure annealed at 100 °C, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance in the resulted Cu interconnects.
铜互连中的热应力控制
在250°C的高温退火条件下,Cu互连线在低k介质中实现了晶粒的生长,没有出现应力消除的问题。为此,在热退火处理之前,在镀铜覆盖层表面沉积了一层TaN金属钝化层。与传统的100℃退火结构相比,钝化层使Cu晶粒在高温下进一步长大,从而增加了Cu晶粒尺寸,提高了Cu互连的电迁移电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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