Reliability of ultra-porous low-k materials for advanced interconnects

J. Plawsky, J. Borja, T. Lu, H. Bakhru, R. Rosenberg, W. Gill, T. Shaw, R. Laibowitz, E. Liniger, S. Cohen, G. Bonilla
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Abstract

Summary form only given. The reliability of new ultra-porous low-k materials is often a fascinating and complex tale involving multiple concepts from material science, electrical and chemical engineering. Pursuing an understanding of reliability for novel low-k materials requires the dissection of fundamental mechanisms and phenomena altering the electrical and physical properties of the dielectric matrix. Failure mechanisms can be categorized into two main groups. Intrinsic failure arises from damage to the dielectric matrix due to the transport of charge carriers. Ion catalyzed failure results from the drift of ionic species originating from the metal/dielectric interface. Integration of sub-20nm process technology nodes can be radically advanced by resolving how major failure mechanisms coexist and collaborate to generate dielectric failures. Here, we present a set of dynamic applied field experiments designed to identify changes in the conduction and reliability of dielectric films as result of bias and temperature stress (BTS). It is shown that ionic species originating from the metal/dielectric interface can behave as trapping centers for charge carriers under BTS. Trapping of electrons into ionic centers could increase the scattering of charge carriers which leads to the additional formation of intrinsic defects across the dielectric matrix, thus accelerating intrinsic failure. A mechanism is proposed to describe how leakage current decay at the onset of BTS is related to charge carrier confinement into intrinsic and ionic defects. The kinetics of charge trapping events were found to be consistent with a time-dependent reaction rate constant, k = k0 · (t + 1)β-1 where 0<;β<;1. This formulation leads to a classic, stretched exponential decay rate that we are looking to use to help predict dielectric reliability.
用于先进互连的超多孔低k材料的可靠性
只提供摘要形式。新型超多孔低k材料的可靠性通常是一个迷人而复杂的故事,涉及材料科学,电气和化学工程的多个概念。追求对新型低k材料可靠性的理解,需要对改变介电基质电学和物理特性的基本机制和现象进行解剖。故障机制可以分为两大类。由于电荷载流子的输运而引起的介电基质的损伤引起本征失效。离子催化的失效是由于源自金属/介质界面的离子种类的漂移造成的。通过解决主要失效机制如何共存并协同产生介电故障,可以从根本上推进亚20nm工艺技术节点的集成。在这里,我们提出了一组动态应用现场实验,旨在确定电介质薄膜的传导和可靠性的变化,作为偏置和温度应力(BTS)的结果。结果表明,在BTS下,源自金属/介质界面的离子可以作为载流子的俘获中心。将电子捕获到离子中心会增加载流子的散射,从而导致介电基质上额外形成本征缺陷,从而加速本征失效。提出了一种描述BTS开始时泄漏电流衰减与电荷载流子限制为本征缺陷和离子缺陷有关的机制。发现电荷捕获事件的动力学符合随时间变化的反应速率常数k = k0·(t + 1)β-1,其中0<;β<;1。这个公式得出了一个经典的、可拉伸的指数衰减率,我们希望用它来帮助预测电介质的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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