3D顺序集成机会和技术优化

P. Batude, B. Sklénard, C. Fenouillet-Béranger, B. Previtali, C. Tabone, O. Rozeau, O. Billoint, O. Turkyilmaz, H. Sarhan, S. Thuries, G. Cibrario, L. Brunet, F. Deprat, J.-E Michallet, F. Clermidy, M. Vinet
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引用次数: 43

摘要

与基于tsv的3D集成电路相比,单片或顺序3D集成电路呈现出垂直维度的“真正”优势,因为堆叠层可以在晶体管尺度上连接。该技术的高通用性通过几个需要小3D接触间距的例子得到了证明。与平面技术相比,单片3D可以在不缩放晶体管技术节点的情况下实现面积和性能的大幅增加。本文总结了这一概念的技术挑战:它提供了获得高性能低温顶部晶体管同时保持底部MOSFET完整性的潜在解决方案的一般概述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D sequential integration opportunities and technology optimization
Compared with TSV-based 3D ICs, monolithic or sequential 3D ICs presents “true” benefits of going to the vertical dimension as the stacked layers can be connected at the transistor scale. The high versatility of this technology is evidenced via several examples requiring small 3D contact pitch. Monolithic 3D is shown to enable substantial gain in area and performance as compared to planar technology without scaling the transistor technology node. This paper summarizes the technological challenges of this concept: it offers a general overview of the potential solutions to obtain a high performance low temperature top transistor while keeping bottom MOSFET integrity.
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