紫外光辅助工艺对低钾薄膜的修复和孔隙密封

Bo Xie, Kelvin Chan, D. Cui, He Ren, Daemian Raj, E. Hollar, Sanjeev Baluja, J. Rocha, M. Naik, A. Demos
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引用次数: 3

摘要

多孔低k介电体在BEOL工艺流程中容易受到蚀刻、灰和CMP等步骤的损坏。这种损伤会降低低k材料的结构和电性能。为了维护集成低k介电体的价值,需要修复过程来修复这些损坏。在这项工作中,紫外光辅助硅基化用于修复损伤和恢复多孔低k介电材料的性能。修复过程可以恢复碳含量,表现为水接触角(WCA)的增加;修复过程可以恢复电性能,表现为介电常数(k)的降低和击穿电场的增加。在结构晶圆上,与未修复相比,蚀刻后修复工艺可使RC降低4-6%。同样的uv辅助平台可以用于孔隙密封,以防止BEOL金属化中使用的金属渗透到多孔低k材料中。在结构晶圆上,当ALD MnN用作铜屏障时,孔隙密封工艺能够减少Mn对多孔低k的渗透。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Restoration and pore sealing of low-k films by UV-assisted processes
Porous low-k dielectrics are susceptible to damages by steps such as etch, ash, and CMP in the BEOL process flow. Such damages degrade the structural and electrical properties of low-k materials. To uphold the value of integrating low-k dielectrics, restoration processes are needed to repair such damages. In this work, UV-assisted silylation is used to repair damages and restore properties of porous low-k dielectrics. The repair process is able to restore carbon content, as indicated by the increase in water contact angle (WCA), and restore the electrical properties, as shown by the decrease in dielectric constant (k) and increase in break-down electrical field based on blanket-film data. On structured wafers, the post-etch repair process effects a 4-6% reduction in RC when compared to without repair. The same UV-assisted platform may be used to effect pore sealing to prevent metals used in BEOL metallization from penetrating into porous low-k materials. On structured wafers, the pore-sealing process is able to reduce Mn penetration into porous low-k when ALD MnN is used as the copper barrier.
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