2020 IEEE 70th Electronic Components and Technology Conference (ECTC)最新文献

{"title":"Influence of Copper Wire Material Additive Elements to the Reliability of Wire Bonded Contacts","authors":"R. Klengel, S. Klengel, J. Schischka, T. Stephan, M. Petzold, M. Eto, N. Araki, Takashi Yamada","doi":"10.1109/ectc32862.2020.00127","DOIUrl":"https://doi.org/10.1109/ectc32862.2020.00127","url":null,"abstract":"During the past ten years, copper (Cu) bond wires have extensively replaced gold (Au) wire materials. While this development began in the consumer electronics sector, Cu wires are now increasingly advancing into applications with challenging environmental conditions and high reliability requirements, such as the automotive sector. Typically, core material of Cu wire (bare Cu / palladium coated Cu wire - PCC) is 99.99wt% Cu. In order to apply PCC wire to automotive devices, the wire material must meet the demands for long term reliability specific to automobile including stable operation under harsh environment. To achieve this, bonding wire suppliers use small amounts of additive elements in Cu core to enhance the long-term reliability.In the meantime, several types of high reliability Cu wires are available in the market. However, there are only few papers describing/comparing the effect of the additive elements used. The mechanism and progress state of degradation behavior (corrosion) depend on the type of additive element, especially for severe high temperature storage life (HTS) test. Therefore, it is very important to understand the effect of additive elements.We investigated the degradation mechanism of Cu wire bond contacts with different type of additive elements. Subsequently to challenging artifact-free preparation routines, high resolution analyzes (SEM, transmission electron microscopy - TEM, nano-spot EDS, electron beam diffraction - EBD) were carried out on ball and stitch bond contacts to clarify the effect caused by the additives. Mechanical bond tests (pull test) were also performed, and the correlation to the result of micro-structural analyzes were studied. The results of this investigation will be valuable information for the wire users in selecting the optimal wire material required for automotive devices.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"37 1","pages":"774-781"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82302057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene-Based Sensing Skins Manufactured by Scalable and Controllable Assembly","authors":"Long Wang, Rui Kou, Ying Zhong","doi":"10.1109/ectc32862.2020.00113","DOIUrl":"https://doi.org/10.1109/ectc32862.2020.00113","url":null,"abstract":"Electronic skins have attracted extensive attention from both academic and industry as they can offer extended functions for human skin by being able to monitor various kinds of stimuli including temperature, stress/strain, humidity, light, etc. Sensors manufactured by controllable, scalable, and ultra-fast assembly of functional materials (e.g., graphene) are reported in this paper. With our innovatively designed controllable manufacturing technique, graphene does not need to be dispersed or blended with non-conductive binders. Instead, the graphene particles are randomly distributed at the surface of the skin-like substrates (i.e., medical tapes) without using any binder within a very short time (less than milliseconds). Strain sensing tests were conducted on those electronic skins, revealing that after relatively long-term tensile tests, the strain sensitivity of the electronic skin kept at a high level with good linearity, stability, and repeatability. As no binder is needed, the skin sensors were found to possess high sensitivity by a demonstration of detecting air follow pressure as low as ~2.5 Pa. Furthermore, the capability of detecting sound has been demonstrated, indicating that they can potentially act as artificial eardrums in the future.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"9 1","pages":"685-689"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79984014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-brightness displays made with micro-transfer printed flip-chip microLEDs","authors":"C. Bower, S. Bonafede, B. Raymond, A. Pearson, C. Prevatte, T. Weeks, E. Radauscher, E. Vick, C. Verreen, B. Krongard, M. Meitl","doi":"10.1109/ectc32862.2020.00040","DOIUrl":"https://doi.org/10.1109/ectc32862.2020.00040","url":null,"abstract":"The incumbent flat-panel technologies, liquid crystal display (LCD) and organic light-emitting diode display (OLED), are ill-suited to produce compact, efficient, and robust high-brightness displays. LCDs are very inefficient, only a small fraction (~5%) of the generated light exits the display. To achieve highbrightness LCDs, practitioners create extremely bright back-light units using inorganic LEDs which require expensive and unreliable active cooling solutions. OLEDs use organic molecules to form light emitting diodes within each display pixel. The lifetime of the organic light emitters is inversely proportional with the display brightness; therefore, OLEDs are not suitable for highbrightness applications. In sharp contrast, inorganic LEDs made using wafer-level semiconductor technology are long-lived, even when operating at high luminance. Displays that use inorganic LEDs as the light-emitters within each display pixel already dominate the giant video walls that increasingly decorate our highways and streetscapes. Today, there are many efforts around the world aimed at making highly miniaturized inorganic LEDs, called microLEDs, and developing methods to transfer those microLEDs from their native substrate to the destination display substrate. Effective techniques to produce microLED displays must have the capability to quickly and accurately transfer millions of microscale devices and are called \"mass transfer\" technologies. Micro-transfer-printing using elastomer stamps is one such \"mass transfer\" technology that has been used to produce prototype microLED displays. Here, we will describe how micro-transfer-printing combined with wafer-level packaging techniques can produce highbrightness displays. We will provide fabrication details and characterization results of various 5.1\" 70 PPI microLED displays. In one example, we produced a monochrome green display using 8 μm x 15 μm flip-chip InGaN microLEDs with a maximum brightness in excess of 30,000 nits. We will highlight application opportunities and remaining challenges for high-brightness displays using microLEDs.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"58 1","pages":"175-181"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81588908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical study of edge condensation in wafer to wafer bonding process with lattice Boltzmann approach","authors":"Jung Shin Lee, Jun Hyung Kim, Daniel Min Woo Rhee","doi":"10.1109/ectc32862.2020.00258","DOIUrl":"https://doi.org/10.1109/ectc32862.2020.00258","url":null,"abstract":"Direct wafer bonding process is applied in semiconductor production because of the advantage of attaching several chips at once. During the bonding process, the top wafer is deformed and the wafer surface is oblique from the bonding front to the edge, thereby forming a wedge-shaped flow field with a wider gap toward the edge. In this flow field, acceleration of the flow rate occurs and expansion due to pressure drop occurs. This expansion also lowers the temperature. When the temperature is sufficiently low, the vapor aggregates and the droplet condenses at the edge for wafer. Experiment on condensation reduction is difficult because of the inability to observe the flow space between wafers. It is only through numerical analysis to observe phenomena occurring in the wafer flow filed and use them to improve process recipe. In this study, numerical analysis is used to observe the condensation occurring at the edge. Numerical method enables the phase change of microscale and interface capture based on lattice Boltzmann, and added the theoretical basis for molecular behavior by adding interatomic potential including electrostatic potential of hydrogen bond. This numerical model was used to analyze the flow between wafers during bonding process and to simulate temperature drop and vapor condensation. It was observed that the vapor density decreased with time and then increased again. When the temperature is sufficiently low, the vapor aggregates and the density of the vapor increases again. A rapid rising in vapor density was observed below 2.5°C. The higher the wettability of the surface, the lower the vapor density at the cold spot. Due to the high wettability of the wafer surface, vapor is dispersed throughout the surface, and thus the amount of vapor that aggregates at the cold spot is reduced. If the wettability is higher than a certain level, a regime in which the width of the generated droplet increases with wettability appears. As a result, an optimum contact angle with minimum droplet width appears, but this may not be optimal in terms of bonding strength.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"29 1","pages":"1646-1652"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81261582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Visualization and Modeling of Microstructural Evolution in SAC305 BGA Joints during Extreme High Temperature Aging","authors":"KM Rafidh Hassan, M. Alam, Jing Wu, J. Suhling, P. Lall","doi":"10.1109/ectc32862.2020.00296","DOIUrl":"https://doi.org/10.1109/ectc32862.2020.00296","url":null,"abstract":"Solder joints provide mechanical support, electrical and thermal interconnection between packaging levels in microelectronics assembly systems. Proper functioning of these interconnections and the reliability of the electronic packages depend largely on the mechanical properties of the solder joints. Lead free solders are common as interconnects in electronic packaging due to their relatively high melting point, attractive mechanical properties, thermal cycling reliability, and environment friendly chemical properties. However, environmental conditions, such as, operating temperature, aging temperature, and aging time significantly affect these properties due to the microstructural evolution of the solder that occurs during aging. Moreover, electronic devices, sometimes experience harsh environment applications including well drilling, geothermal energy, automotive power electronics, and aerospace engines, where solders are exposed to very high temperatures from T = 125-200 °C. Mechanical properties as well as microstructural study of lead free solders at elevated temperatures are limited in literature. Previous investigations on the microstructural evolution mainly emphasized on aging at temperatures up to 125 °C. In addition, those studies were limited on investigating the coarsening of Ag3Sn IMC particles within the beta-Sn matrix.In this work, the microstructural evolution of SAC305 (96.5Sn-3.0Ag-0.5Cu) BGA joints were investigated for different aging conditions utilizing Scanning Electron Microscopy (SEM). In particular, our approach has been to monitor aging induced microstructural changes occurring within fixed regions in selected lead free solder joints, and to create time-lapse imagery of the microstructure evolution. Aging was performed at T = 150 °C for several durations up to 20 days, and the topography of the microstructure of a fixed region was captured using the SEM system. This process generated several images of the microstructure as the aging progressed. We have also explored the Mechanical behavior, and aging effects of SAC305 solder joints at extreme high testing temperatures of T = 150 °C using the method of nanoindentation. To study the aging effects, solder joints were preconditioned for 0, 1, 5, 10, and 30 days at T = 125 °C in a box oven. Nanoindentation testing was then performed on the aged specimens at a test temperature of T = 150 °C to extract the elastic modulus, hardness, and creep performance of the aged material.As expected, the analysis of the evolving SAC305 BGA microstructure showed a significant amount of diffusion of silver and copper in the beta-tin matrix during aging. In addition, the growth of the copper-tin layer at the solder joint and copper pad interface at the PCB side has been visualized, and then measured as a function of aging time and temperature. Quantitative analysis of the evolving microstructure showed that the particles coalesced during aging leading to a decrease in the total number of par","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"1 1","pages":"1894-1903"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82933086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D Composite Glass-silicon Interposer Integrated With Polymer Arrayed Waveguide Grating","authors":"Ziji Wang, J. Shang","doi":"10.1109/ectc32862.2020.00288","DOIUrl":"https://doi.org/10.1109/ectc32862.2020.00288","url":null,"abstract":"Integrating optical interconnects onto TSV/TGV based interposer to meet the ever-increasing chip-to-chip bandwidth demand has received continuously growing interest. Besides optical interconnections, passive optical device with relatively large footprints and low fabrication cost also holds the potential to be directly integrated onto current interposer technology. In this study, a polymer-based low-index-contrast arrayed waveguide grating(AWG) is integrated onto the 3D composite glass-silicon interposer to realize wavelength division (de)multiplexing (WDM) applications. The 3D composite interposer is fabricated by glass reflow process, polymer arrayed waveguide grating which has single mode waveguide platform is then directly fabricated onto the interposer. The feasibility of using borosilicate glass as bottom cladding of on-interposer optical waveguide and passive optical device has been verified through both simulation and experimental results. Transferring area-cost optical devices from photonics chip to composite interposer provides a promising solution to enhance the integration density.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"5 1","pages":"1844-1848"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86521457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chemical thinning approach for high-topography glass wafers","authors":"M. Bedjaoui, J. Brun, Steve W. Martin, R. Salot","doi":"10.1109/ECTC32862.2020.00021","DOIUrl":"https://doi.org/10.1109/ECTC32862.2020.00021","url":null,"abstract":"In this paper, a novel processing scheme for the thinning of high-topography glass wafers and its use for the fabrication of thin film battery devices is reported. The approach involves different engineering steps from the fabrication of battery stacks on 8\" rigid alkali-free glass wafers (initial thickness of 500μm) to the delivery of individual battery devices on etched glass (final thickness from 100pm to 50μm). In particular, we introduce the chemical etching solutions, the used masking materials as well as the technique of battery wafers mounting. This scheme, therefore, allows a wet etching of the rear surface of battery wafers in such a way that the etching system does not disturb the electrochemical properties of thin film batteries. Using the proposed method, fully functional thin film batteries (thickness of 40μm, size of 7mmx7mm) on ultrathin glass (50μm±5μm) were achieved.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"35 1","pages":"49-55"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89203123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile Preparation of Cu-Ag Micro-Nano Composite Paste for High Power Device Packaging","authors":"Jiaxin Liu, Yun Mou, Yang Peng, Mingxiang Chen","doi":"10.1109/ECTC32862.2020.00124","DOIUrl":"https://doi.org/10.1109/ECTC32862.2020.00124","url":null,"abstract":"In this paper, a novel Cu-Ag micro-nano composite particle (MNCP) paste was prepared, and a low temperature Cu- Cu bonding with high sheer strength was obtained. The microstructures and morphologies of the Cu-Ag MNCPs were systematically investigated. The surface chemical compositions of the composite particles displayed a little oxidized phenomenon, which could be reduced during sintering and bonding. After sintering at 275°C for 30 min under a low pressure, a sheer strength Cu-Cu bonding joint of 32.7 MPa was achieved. The fracture and cross-sectional microstructures of bonded joints exhibited obvious ductile characteristics and compact structure. These results manifested the Cu-Ag MNCPs are promising materials to fulfill the requirements of die-attach materials for high power device packaging.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"28 1","pages":"755-761"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89844147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra low profile thin film capacitor for high performance electronic packages","authors":"Kenichi Yoshida, Hitoshi Saita, T. Kariya","doi":"10.1109/ectc32862.2020.00073","DOIUrl":"https://doi.org/10.1109/ectc32862.2020.00073","url":null,"abstract":"Thin film capacitor (Z-Leveler®) has been developed with our unique technology to form dielectric thin film layer on metallic foil. This thin film technology allows Z-Leveler® to have ultra low profile less than 50μm thickness with flexibility by using metallic foil as substrate and high capacitance density by using a fully crystalized barium titanate (BT) material as dielectric layer. In addition, Z-Leveler® can have very low equivalent series inductance (ESL) less than 10pH, which leads keeping the impedance low in high frequency such as more than 100MHz. This Z-Leveler® technology will lead a new electronic package concept by replacing the conventional embedding or surface mounting electronic component to have high performance and good power efficiency for high-speed communication and computing application.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"1 1","pages":"414-418"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85193329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Heterogeneous Integration of 5G and Millimeter-Wave Diplexers with 3D Glass Substrates","authors":"Muhammad Ali, A. Watanabe, Takenori Kakutani, P. Raj, R. Tummala, M. Swaminathan","doi":"10.1109/ECTC32862.2020.00218","DOIUrl":"https://doi.org/10.1109/ECTC32862.2020.00218","url":null,"abstract":"Package-integrated implementation of highly- miniaturized diplexers is presented for the first time on ultra-thin laminated glass substrates for millimeter-wave (mm-wave) applications in emerging RF front-end modules (FEM). The diplexers are designed using miniaturized, doubly- terminated bandpass filters which cover the 5G new radio (NR) mm-wave bands: n257, n258 and n260. Two different types of filters: hairpin and edge-coupled are modeled, designed and optimized for this non-contiguous diplexer demonstration. Since diplexer is a three-port device, the considerations for optimum RF performance as well as characterization are included in the modeling phase. From the fabrication standpoint, unlike conventional etching processes, panel-scale semi-additive patterning (SAP) process is utilized to form high-precision, fine-feature redistribution layers (RDL) on ultra-thin glass substrates to accurately realize the aforementioned passive components. These diplexers can be integrated with antennas on the top layer of a multilayered 5G module or they can be utilized as integrated passive devices (IPDs). An appropriately sized ground plane is sufficient to isolate the rest of the system from these diplexers, making them ideal for applications such as heterogeneously-integrated packages. The demonstrated diplexers, comprising of 5G NR band filters, exhibit low insertion loss, high stopband rejection, high selectivity, ease-of-integration in packages as well as small footprint. The simulated response of the fabricated diplexers is in excellent agreement with the measured results.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"73 1","pages":"1376-1382"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83362465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}