Fan-out ultrasound transducer array in substrate

Yao Lu, L. Wan
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Abstract

The idea that employs an advanced package that combines Embedded Substrate Level Package with Fan-out Substrate Level Package is proposed to package high-density and high-frequency ultrasound transducer array. We successfully verified the process principle. The material of the sample array is lead zirconated titanite piezoelectric ceramic and silicon dummy chip, which total size of arrays is 5000μm× 5000μm×140μm. Arrays are divided into 50×50 elements. Each element size was 70μm × 70 μm×140μm. The kerf between two adjacent array elements is 30μm. We successfully fan out the signal trace of two 1×44 linear arrays in the 50×50 area array using a single-layer re-distribution layer. The impedance curve was measured on the impedance meter. The blind via diameter on the linear array is 30μm, and the line/spacing is 50μm/50μm. We try to fan out a 4×16 planar array in the 50×50 planar array using a single-layer re-distribution layer. The blind via diameter on the planar array is 20μm, and the line width and spacing are 20μm/15μm. However, some questions are leading to the low yield of this process. We analyze the reasons for the low yield.
衬底扇形超声换能器阵列
提出了采用嵌入式基板级封装与扇出基板级封装相结合的先进封装方法来封装高密度高频超声换能器阵列。我们成功地验证了工艺原理。样品阵列的材料为锆钛酸铅压电陶瓷和硅假芯片,阵列总尺寸为5000μ mx 5000μm×140μm。数组分为50×50元素。每个元件尺寸为70μm × 70 μm×140μm。相邻两个阵列单元之间的间距为30μm。我们成功地利用单层重分布层将两个1×44线性阵列的信号迹迹扇形分布在50×50区域阵列中。在阻抗计上测量阻抗曲线。线阵上的盲孔直径为30μm,线间距为50μm/50μm。我们尝试使用单层重新分布层在50×50平面阵列中扇形出4×16平面阵列。平面阵列上的盲孔直径为20μm,线宽和间距为20μm/15μm。然而,一些问题导致了该工艺的低收率。我们分析了收益率低的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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