High-brightness displays made with micro-transfer printed flip-chip microLEDs

C. Bower, S. Bonafede, B. Raymond, A. Pearson, C. Prevatte, T. Weeks, E. Radauscher, E. Vick, C. Verreen, B. Krongard, M. Meitl
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引用次数: 2

Abstract

The incumbent flat-panel technologies, liquid crystal display (LCD) and organic light-emitting diode display (OLED), are ill-suited to produce compact, efficient, and robust high-brightness displays. LCDs are very inefficient, only a small fraction (~5%) of the generated light exits the display. To achieve highbrightness LCDs, practitioners create extremely bright back-light units using inorganic LEDs which require expensive and unreliable active cooling solutions. OLEDs use organic molecules to form light emitting diodes within each display pixel. The lifetime of the organic light emitters is inversely proportional with the display brightness; therefore, OLEDs are not suitable for highbrightness applications. In sharp contrast, inorganic LEDs made using wafer-level semiconductor technology are long-lived, even when operating at high luminance. Displays that use inorganic LEDs as the light-emitters within each display pixel already dominate the giant video walls that increasingly decorate our highways and streetscapes. Today, there are many efforts around the world aimed at making highly miniaturized inorganic LEDs, called microLEDs, and developing methods to transfer those microLEDs from their native substrate to the destination display substrate. Effective techniques to produce microLED displays must have the capability to quickly and accurately transfer millions of microscale devices and are called "mass transfer" technologies. Micro-transfer-printing using elastomer stamps is one such "mass transfer" technology that has been used to produce prototype microLED displays. Here, we will describe how micro-transfer-printing combined with wafer-level packaging techniques can produce highbrightness displays. We will provide fabrication details and characterization results of various 5.1" 70 PPI microLED displays. In one example, we produced a monochrome green display using 8 μm x 15 μm flip-chip InGaN microLEDs with a maximum brightness in excess of 30,000 nits. We will highlight application opportunities and remaining challenges for high-brightness displays using microLEDs.
高亮度显示器由微转移印刷倒装芯片微型led制成
现有的平板技术,液晶显示器(LCD)和有机发光二极管显示器(OLED),不适合生产紧凑、高效、坚固的高亮度显示器。lcd是非常低效的,只有一小部分(~5%)产生的光退出显示。为了实现高亮度的lcd,从业者使用无机led制造极亮的背光单元,这需要昂贵且不可靠的主动冷却解决方案。oled使用有机分子在每个显示像素内形成发光二极管。有机发光体的寿命与显示亮度成反比;因此,oled不适合高亮度应用。与之形成鲜明对比的是,使用晶圆级半导体技术制造的无机led即使在高亮度下工作,寿命也很长。在每个显示像素内使用无机led作为光源的显示器已经主导了巨大的视频墙,这些视频墙越来越多地装饰着我们的高速公路和街道景观。今天,世界上有许多努力旨在制造高度小型化的无机led,称为微型led,并开发将这些微型led从其原生衬底转移到目标显示衬底的方法。生产微型led显示屏的有效技术必须能够快速准确地转移数百万个微型器件,这被称为“传质”技术。使用弹性体印章的微转移印刷是一种“传质”技术,已用于生产微型led显示器的原型。在这里,我们将描述如何结合微转移印刷与晶圆级封装技术可以生产高亮度显示器。我们将提供各种5.1“70 PPI微型led显示屏的制造细节和表征结果。在一个例子中,我们使用8 μm x 15 μm倒装芯片InGaN microled生产单色绿色显示器,最大亮度超过30,000尼特。我们将重点介绍使用微led的高亮度显示器的应用机会和仍然存在的挑战。
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