室温下氮化镓与金刚石衬底的直接键合

2020 IEEE 70th Electronic Components and Technology Conference (ECTC) Pub Date : 2020-06-01 DOI:10.1109/ECTC32862.2020.00210

T. Suga, F. Mu

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引用次数: 6

摘要

随着对GaN-HEMT器件高功率密度和高可靠性要求的不断提高，实现GaN-HEMT器件更好的热管理越来越受到人们的重视。虽然生长方法已经得到了广泛的研究，但新型的键合方法为实现gan -金刚石的集成带来了新的可能性。本文综述了氮化镓-金刚石集成的键合研究进展。

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Direct Bonding of GaN to Diamond Substrate at Room Temperature

GaN-diamond integration is being paid far more attention to realize a better thermal management of GaN-HEMT device GaN-HEMT device with the increase of the requirements on high power density and high reliability. Although growth method has been widely investigated, novel bonding method bring new possibility to realize GaN-diamond integration without traditional problems. This paper reviewed the previous bonding researches for GaN-diamond integration.

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2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

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