Direct Bonding of GaN to Diamond Substrate at Room Temperature

Abstract

GaN-diamond integration is being paid far more attention to realize a better thermal management of GaN-HEMT device GaN-HEMT device with the increase of the requirements on high power density and high reliability. Although growth method has been widely investigated, novel bonding method bring new possibility to realize GaN-diamond integration without traditional problems. This paper reviewed the previous bonding researches for GaN-diamond integration.