2012 International Electron Devices Meeting最新文献_第2页

Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10−3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response Ge上的无界面ZrO2具有0.39 nm EOT， κ ~ 43， ~ 2×10−3 A/cm2栅极漏，SS =85 mV/dec, Ion/Ioff =6×105，高应变响应

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479086

Cheng‐Ming Lin, Hung-Chih Chang, Yen‐Ting Chen, I-Hsieh Wong, H. Lan, S. Luo, Jing-Yi Lin, Y.-J. Tseng, Cheewee Liu, C. Hu, Fu-Liang Yang

{"title":"Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10−3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response","authors":"Cheng‐Ming Lin, Hung-Chih Chang, Yen‐Ting Chen, I-Hsieh Wong, H. Lan, S. Luo, Jing-Yi Lin, Y.-J. Tseng, Cheewee Liu, C. Hu, Fu-Liang Yang","doi":"10.1109/IEDM.2012.6479086","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479086","url":null,"abstract":"0.39-nm ultrathin EOT ZrO2 having κ value as high as ~43 without an interfacial layer (IL) is demonstrated on Ge substrates. The EOT and gate leakage are much lower than the recent reported data [1]. In situ NH3/H2 remote plasma treatment (RPT) after RTO-grown ultrathin (<;1nm) GeO2/Ge and prior to PEALD ZrO2 leads to the formation of tetragonal phase ZrO2 and the inhibition of GeOx IL regrowth. As the number of RPT cycles increases, it is observed that not only higher [N] but more GeO2 component formed on Ge surface. GeO diffuses into ZrO2 layer via the interface reaction (Ge+GeO2 → 2GeO) and stabilize the tetragonal phase ZrO2. The gate dielectric has a leakage current ~104X lower than other reported dielectrics in this EOT region. Ge (001) pMOSFET has low SS of 85 mV/dec and high Ion/Ioff of ~6×105 at Vd= -1V, while nMOSFET has SS of 90 mV/dec and Ion/Ioff of ~1×105 at Vd=1V. The peak electron mobility is determined by the remote phonon scattering stemming from the high-κ value. The biaxial tensile strain of ~0.04% applied on Ge (111) nMOSFET with an EOT=0.78nm produces a 4.8% drain current enhancement along the <;110> channel.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78279273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Characterization of traps in 3-D stacked NAND flash memory devices with tube-type poly-Si channel structure 具有管型多晶硅沟道结构的三维堆叠NAND闪存器件中陷阱的表征

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479010

M. Jeong, S. Joe, B. Jo, Ho-Jung Kang, J. Bae, Kyoung-Rok Han, Eun-seok Choi, G. Cho, Sung-Kye Park, Byung-Gook Park, Jong-Ho Lee

引用次数: 15

Novel hybrid DRAM/MRAM design for reducing power of high performance mobile CPU 新型混合DRAM/MRAM设计，降低高性能移动CPU功耗

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479019

K. Abe, H. Noguchi, E. Kitagawa, N. Shimomura, J. Ito, S. Fujita

引用次数: 31

Diamond semiconductor JFETs by selectively grown n+-diamond side gates for next generation power devices 下一代功率器件中选择性生长n+金刚石侧栅的金刚石半导体jfet

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6478999

T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, M. Hatano

引用次数: 9

Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V 新型栅极凹槽垂直InAs/GaSb tfet，在VDS = 0.5 V时具有180 μA/μm的高离子

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479154

Guangle Zhou, R. Li, T. Vasen, M. Qi, S. Chae, Y. Lu, Q. Zhang, H. Zhu, J. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing

引用次数: 171

Active Width Modulation (AWM) for cost-effective and highly reliable PRAM 有源宽度调制(AWM)的成本效益和高可靠的PRAM

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479148

D. Ha, K. W. Lee, K. Sim, J. H. Yu, S. Ahn, S. Y. Kim, T. An, S. H. Hong, S. Kim, J. Lee, B. C. Kim, G. Koh, S. Nam, G. Jeong, C. Chung

引用次数: 2

MOS interface and channel engineering for high-mobility Ge/III-V CMOS 高迁移率Ge/III-V CMOS的MOS接口和通道工程

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479085

S. Takagi, R. Zhang, S. Kim, N. Taoka, M. Yokoyama, Junkyo Suh, R. Suzuki, M. Takenaka

{"title":"MOS interface and channel engineering for high-mobility Ge/III-V CMOS","authors":"S. Takagi, R. Zhang, S. Kim, N. Taoka, M. Yokoyama, Junkyo Suh, R. Suzuki, M. Takenaka","doi":"10.1109/IEDM.2012.6479085","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479085","url":null,"abstract":"CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. However, the device/process/integration technologies of Ge/III-V n- and pMOSFETs for satisfying requirements of future node MOSFETs have not been established yet. In this paper, we address gate stack and channel engineering for improving the channel mobility and the MOS interface properties with emphasis on thin EOT and ultrathin body, which are mandatory in the future nodes. As for Ge MOSFETs, GeOx/Ge interfaces formed by plasma post oxidation are shown to realize thin EOT, low Dit and high mobility. HfO2/Al2O3/GeOx/Ge gate stacks exhibit record high electron and hole mobility under EOT of 0.76 nm. As for III-V MOSFETs, ultrathin InAs channels with MOS interface buffer layers are shown to provide high electron mobility under InAs thickness of 3 nm. The results of low Dit HfO2/Al2O3/InGaAs stacks with CET of 1.08 nm are also presented. A strategy to enhance electron mobility in InGaAs MOSFETs on a basis of physical understanding of the MOS interface properties including high Dit inside the conduction band is also addressed.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86721003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces 决定Ge p-和n- mosfet在高Ns区迁移率的物理机制以及原子平面GeOx/Ge界面对迁移率的改善

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479051

Rui Zhang, Po-Chin Huang, Ju-Chin Lin, M. Takenaka, S. Takagi

引用次数: 22

Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs 了解AlGaN/GaN mishemt阈值电压不稳定性的原因

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479033

P. Lagger, C. Ostermaier, G. Pobegen, D. Pogany

引用次数: 123

Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm 柔性a- igzo TFT放大器制造在独立的聚酰亚胺箔工作在1.2 MHz，而弯曲到5毫米的半径

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/iedm.2012.6478982

N. Munzenrieder, L. Petti, C. Zysset, G. Salvatore, T. Kinkeldei, C. Perumal, C. Carta, F. Ellinger, G. Troster

引用次数: 63