Active Width Modulation (AWM) for cost-effective and highly reliable PRAM

D. Ha, K. W. Lee, K. Sim, J. H. Yu, S. Ahn, S. Y. Kim, T. An, S. H. Hong, S. Kim, J. Lee, B. C. Kim, G. Koh, S. Nam, G. Jeong, C. Chung
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引用次数: 2

Abstract

This paper presents, for the first time, the Active Width Modulation (AWM) technology which compensates a string resistance with the active widths of local Y selectors for the purpose of increasing the number of cells-per-string (CPS). The AWM is demonstrated using 58 nm 512 Mb PRAM with 32 CPS instead of 8 CPS [1], which can reduce the chip size by 4.3%. Also, the systematic variability of a program current, ΔIPGM, is reduced from 17.8% to 0.82%, and that of a write energy, ΔEPGM, from 47.9% to 2.0%. Both write endurance and disturbance of >1M cycles are achieved for 512 Mb PRAM. The AWM can be further applied to increase CPS to 64 or 128, together with the reduction of a reset current, IRESET, for sub-40 nm PRAM technology and so on.
有源宽度调制(AWM)的成本效益和高可靠的PRAM
本文首次提出了用局部Y选择器的有源宽度补偿串电阻的有源宽度调制(AWM)技术,以提高每串的单元数(CPS)。AWM演示使用58 nm 512 Mb PRAM, 32 CPS而不是8 CPS[1],这可以将芯片尺寸减小4.3%。此外,程序电流ΔIPGM的系统可变性从17.8%降低到0.82%,写入能量ΔEPGM的系统可变性从47.9%降低到2.0%。对于512mb的PRAM,可以实现bb101m周期的写入持久性和干扰。AWM可以进一步应用于将CPS提高到64或128,同时降低复位电流IRESET,用于sub-40 nm PRAM技术等等。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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