Guangle Zhou, R. Li, T. Vasen, M. Qi, S. Chae, Y. Lu, Q. Zhang, H. Zhu, J. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing
{"title":"新型栅极凹槽垂直InAs/GaSb tfet,在VDS = 0.5 V时具有180 μA/μm的高离子","authors":"Guangle Zhou, R. Li, T. Vasen, M. Qi, S. Chae, Y. Lu, Q. Zhang, H. Zhu, J. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing","doi":"10.1109/IEDM.2012.6479154","DOIUrl":null,"url":null,"abstract":"Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the tunneling direction have been fabricated using a novel gate-recess process, resulting in record on-current. The tunnel junction consists of InAs/GaSb with a broken band alignment. The gate-recess process results in low drain contact and access resistances; together with the favorable broken gap heterojunction, this leads to a record high I<sub>ON</sub> of 180 μA/μm at V<sub>DS</sub> = V<sub>GS</sub> = 0.5 V with an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 6 ×10<sup>3</sup>. Both SiN<sub>x</sub> passivation and forming gas anneal (FGA) were found to improve the device subthreshold swing (SS), resulting in a SS<sub>MIN</sub> of 200 mV/dec at 300 K and 50 mV/dec at 77 K. Capacitance-voltage (C-V) measurements indicate that the device SS performance is limited by interfacial trap density (D<sub>it</sub>).","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"171","resultStr":"{\"title\":\"Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V\",\"authors\":\"Guangle Zhou, R. Li, T. Vasen, M. Qi, S. Chae, Y. Lu, Q. Zhang, H. Zhu, J. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing\",\"doi\":\"10.1109/IEDM.2012.6479154\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the tunneling direction have been fabricated using a novel gate-recess process, resulting in record on-current. The tunnel junction consists of InAs/GaSb with a broken band alignment. The gate-recess process results in low drain contact and access resistances; together with the favorable broken gap heterojunction, this leads to a record high I<sub>ON</sub> of 180 μA/μm at V<sub>DS</sub> = V<sub>GS</sub> = 0.5 V with an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 6 ×10<sup>3</sup>. Both SiN<sub>x</sub> passivation and forming gas anneal (FGA) were found to improve the device subthreshold swing (SS), resulting in a SS<sub>MIN</sub> of 200 mV/dec at 300 K and 50 mV/dec at 77 K. Capacitance-voltage (C-V) measurements indicate that the device SS performance is limited by interfacial trap density (D<sub>it</sub>).\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"171\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479154\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the tunneling direction have been fabricated using a novel gate-recess process, resulting in record on-current. The tunnel junction consists of InAs/GaSb with a broken band alignment. The gate-recess process results in low drain contact and access resistances; together with the favorable broken gap heterojunction, this leads to a record high ION of 180 μA/μm at VDS = VGS = 0.5 V with an ION/IOFF ratio of 6 ×103. Both SiNx passivation and forming gas anneal (FGA) were found to improve the device subthreshold swing (SS), resulting in a SSMIN of 200 mV/dec at 300 K and 50 mV/dec at 77 K. Capacitance-voltage (C-V) measurements indicate that the device SS performance is limited by interfacial trap density (Dit).