N. Munzenrieder, L. Petti, C. Zysset, G. Salvatore, T. Kinkeldei, C. Perumal, C. Carta, F. Ellinger, G. Troster
{"title":"柔性a- igzo TFT放大器制造在独立的聚酰亚胺箔工作在1.2 MHz,而弯曲到5毫米的半径","authors":"N. Munzenrieder, L. Petti, C. Zysset, G. Salvatore, T. Kinkeldei, C. Perumal, C. Carta, F. Ellinger, G. Troster","doi":"10.1109/iedm.2012.6478982","DOIUrl":null,"url":null,"abstract":"We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage VDD of 5 V, and exhibit maximum cutoff frequencies fC of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"22 1","pages":"5.2.1-5.2.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"63","resultStr":"{\"title\":\"Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm\",\"authors\":\"N. Munzenrieder, L. Petti, C. Zysset, G. Salvatore, T. Kinkeldei, C. Perumal, C. Carta, F. Ellinger, G. Troster\",\"doi\":\"10.1109/iedm.2012.6478982\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage VDD of 5 V, and exhibit maximum cutoff frequencies fC of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"22 1\",\"pages\":\"5.2.1-5.2.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"63\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iedm.2012.6478982\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iedm.2012.6478982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm
We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage VDD of 5 V, and exhibit maximum cutoff frequencies fC of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers.