Diamond semiconductor JFETs by selectively grown n+-diamond side gates for next generation power devices

Abstract

Diamond semiconductor is an attractive material for next-generation power devices due to its wide band-gap, high breakdown field, and high thermal conductivity. By selective n+-type diamond growth, diamond junction field effect transistors (JFETs) were fabricated and operated from 223 to 573 K. JFETs show very low leakage currents in the 10-15 A range and a steep subthreshold slope (SS) of 81 mV/decade at room temperature. We confirm that the devices possess steep SS and low leakage current in the 10-14-10-15 A r a n ge s up to 423 K.