2012 International Electron Devices Meeting最新文献_第3页

Analog and RF circuits design and future devices interaction 模拟和射频电路设计和未来的设备交互

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479041

A. Matsuzawa

引用次数: 10

A multi-physics simulation technique for integrated MEMS 集成MEMS的多物理场仿真技术

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6478989

H. Toshiyoshi, T. Konishi, K. Machida, K. Masu

引用次数: 13

Voltage-induced switching of nanoscale magnetic tunnel junctions 纳米级磁隧道结的电压感应开关

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479130

J. G. Alzate, P. Amiri, P. Upadhyaya, S. Cherepov, Jian Zhu, Mark Lewis, Richard Dorrance, J. Katine, Jürgen Langer, Kosmas Galatsis, D. Markovic, Ilya Krivorotov, Kang L. Wang

引用次数: 70

Evolution of optical structure in image sensors 图像传感器光学结构的演化

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479092

Nobukazu Teranishi, Hisashi Watanabe, Takehiko Ueda, Naohisa Sengoku

引用次数: 16

Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals Cu(Mn)合金种子互连的电迁移可扩展性及其基本原理的理解

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479161

T. Nogami, C. Penny, A. Madan, C. Parks, J. Li, P. Flaitz, A. Uedono, S. Chiang, M. He, A. Simon, T. Bolom, T. Ryan, F. Ito, C. Christiansen, L. Tai, C. Hu, H. Kim, X. Zhang, K. Tanwar, S. Choi, F. Baumann, R. Davis, J. Kelly, R. Murphy, S. Molis, J. Rowland, P. Dehaven, D. Canaperi, T. Spooner, D. Edelstein

引用次数: 11

MOSFET performance and scalability enhancement by insertion of oxygen layers 通过插入氧层提高MOSFET的性能和可扩展性

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6478990

N. Xu, N. Damrongplasit, H. Takeuchi, R. Stephenson, N. Cody, A. Yiptong, X. Huang, M. Hytha, R. Mears, T. Liu

引用次数: 15

Optimized spin relaxation length in few layer graphene at room temperature 室温下少数层石墨烯的自旋弛豫长度优化

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6478978

Yunfei Gao, Y. Kubo, Chia-Ching Lin, Zhihong Chen, J. Appenzeller

引用次数: 11

A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTe z phase change material 通过改变(Ge, N)xSbyTe z相变材料中Ge/N的浓度制备热鲁棒性相变存储器

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479141

H. Cheng, J. Y. Wu, R. Cheek, S. Raoux, M. BrightSky, D. Garbin, S. Kim, T. Hsu, Y. Zhu, E. Lai, E. Joseph, A. Schrott, S. Lai, A. Ray, H. Lung, C. Lam

{"title":"A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTe z phase change material","authors":"H. Cheng, J. Y. Wu, R. Cheek, S. Raoux, M. BrightSky, D. Garbin, S. Kim, T. Hsu, Y. Zhu, E. Lai, E. Joseph, A. Schrott, S. Lai, A. Ray, H. Lung, C. Lam","doi":"10.1109/IEDM.2012.6479141","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479141","url":null,"abstract":"Phase change memory (PCRAM) is an ideal embedded memory due to its simple BEOL process and low voltage operation. Industrial and automotive applications of PCRAM, however, have not been realized because of poor high temperature properties of the conventional Ge2Sb2Te5 phase-change material [1-3]. We have previously reported a special GexSbyTez material along the Ge and Sb2Te3 tie line that showed superior high temperature performance. In this work we have further enhanced our previous “golden” material by incorporating nitrogen and engineering the Ge/N concentration. In order to rapidly explore a range of new materials a fast method to test retention behavior by laser melt-quenching is adopted which yields retention data on blanket films consistent with device results. A new material with special Ge/N concentration with excellent high temperature retention is discovered. The new material demonstrated nearly 100% yield in a 256 Mb test chip after 160 °C, 84 hrs baking, with projected 10-year retention at 120 °C. (> 9,000 years at 85 °C.).","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"22 1","pages":"31.1.1-31.1.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82154720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology 先进的柔性CMOS集成电路在塑料上实现控制剥落技术

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6478981

D. Shahrjerdi, S. Bedell, A. Khakifirooz, K. Fogel, P. Lauro, K. Cheng, J. Ott, M. Gaynes, D. Sadana

引用次数: 25

Insights on radio frequency bilayer graphene FETs 射频双层石墨烯fet的研究进展

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI: 10.1109/IEDM.2012.6479059

G. Fiori, G. Iannaccone

引用次数: 26