Optimized spin relaxation length in few layer graphene at room temperature

Abstract

For the first time, a spin relaxation length (λS) of ~5μm is measured in graphene at room temperature - a critical accomplishment considering the recent interest in spin based devices for low power applications. The key to this demonstration lies in the use of few layer graphene. In fact, optimum performance is demonstrated here for ~7-layer graphene. Moreover, a 4x increase of λS is observed at 77K.