通过插入氧层提高MOSFET的性能和可扩展性

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6478990

N. Xu, N. Damrongplasit, H. Takeuchi, R. Stephenson, N. Cody, A. Yiptong, X. Huang, M. Hytha, R. Mears, T. Liu

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引用次数: 15

摘要

本文对在硅沟道区域内插入氧层对MOSFET迁移率的增强和静电完整性的改善进行了详细的模拟和实验研究。讨论了该技术在薄体MOSFET结构中的适用性。预测表明，在14nm节点上，它将比应变更有效地提高性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MOSFET performance and scalability enhancement by insertion of oxygen layers

A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.

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2012 International Electron Devices Meeting

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