J. G. Alzate, P. Amiri, P. Upadhyaya, S. Cherepov, Jian Zhu, Mark Lewis, Richard Dorrance, J. Katine, Jürgen Langer, Kosmas Galatsis, D. Markovic, Ilya Krivorotov, Kang L. Wang
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Voltage-induced switching of nanoscale magnetic tunnel junctions
We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ~10x reduction in switching energies (compared to STT) with leakage currents <; 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.
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