Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

P. Lagger, C. Ostermaier, G. Pobegen, D. Pogany
{"title":"Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs","authors":"P. Lagger, C. Ostermaier, G. Pobegen, D. Pogany","doi":"10.1109/IEDM.2012.6479033","DOIUrl":null,"url":null,"abstract":"GaN-power HEMTs with insulated gate structure suffer from threshold voltage drifts (ΔVth) under forward gate bias stress. We present a systematical approach to characterize the phenomenon and understand the dominant physical mechanisms causing this effect. We found out that ΔVth is caused by traps with a broad distribution of trapping and emission time constants. This distribution is analyzed using so called Capture Emission Time (CET) maps known from the study of bias temperature instability (BTI) in CMOS devices. Physical models, which could explain the broad distribution of time constants, are discussed.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"31 1","pages":"13.1.1-13.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"123","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 123

Abstract

GaN-power HEMTs with insulated gate structure suffer from threshold voltage drifts (ΔVth) under forward gate bias stress. We present a systematical approach to characterize the phenomenon and understand the dominant physical mechanisms causing this effect. We found out that ΔVth is caused by traps with a broad distribution of trapping and emission time constants. This distribution is analyzed using so called Capture Emission Time (CET) maps known from the study of bias temperature instability (BTI) in CMOS devices. Physical models, which could explain the broad distribution of time constants, are discussed.
了解AlGaN/GaN mishemt阈值电压不稳定性的原因
具有绝缘栅极结构的gan功率hemt在正向栅极偏置应力下会产生阈值电压漂移(ΔVth)。我们提出了一种系统的方法来描述这种现象,并了解导致这种效应的主要物理机制。我们发现ΔVth是由圈闭和发射时间常数分布广泛的圈闭引起的。这种分布是用CMOS器件中偏置温度不稳定性(BTI)研究中已知的捕获发射时间(CET)图来分析的。讨论了可以解释时间常数广泛分布的物理模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信