D. Ha, K. W. Lee, K. Sim, J. H. Yu, S. Ahn, S. Y. Kim, T. An, S. H. Hong, S. Kim, J. Lee, B. C. Kim, G. Koh, S. Nam, G. Jeong, C. Chung
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Active Width Modulation (AWM) for cost-effective and highly reliable PRAM
This paper presents, for the first time, the Active Width Modulation (AWM) technology which compensates a string resistance with the active widths of local Y selectors for the purpose of increasing the number of cells-per-string (CPS). The AWM is demonstrated using 58 nm 512 Mb PRAM with 32 CPS instead of 8 CPS [1], which can reduce the chip size by 4.3%. Also, the systematic variability of a program current, ΔIPGM, is reduced from 17.8% to 0.82%, and that of a write energy, ΔEPGM, from 47.9% to 2.0%. Both write endurance and disturbance of >1M cycles are achieved for 512 Mb PRAM. The AWM can be further applied to increase CPS to 64 or 128, together with the reduction of a reset current, IRESET, for sub-40 nm PRAM technology and so on.