Digest of Technical Papers.1990 Symposium on VLSI Technology最新文献

New well structure for deep sub-μm CMOS/BiCMOS using thin epitaxy over buried layer and trench isolation 采用埋层上的薄外延和沟槽隔离技术的深亚微米CMOS/BiCMOS新型井结构

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111019

Y. Okazaki, T. Kobayashi, S. Konaka, T. Morimoto, M. Takahashi, K. Imai, Y. Kado

引用次数: 8

A novel CBi-CMOS technology by DIIP process 基于DIIP工艺的新型CBi-CMOS技术

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111016

K. Higashitani, H. Honda, K. Ueda, M. Hatanaka, S. Nagao

引用次数: 10

0.6 μm, single poly advanced BiCMOS (ABiC IV) technology for ASIC applications 0.6 μm，用于ASIC应用的单多先进BiCMOS (ABiC IV)技术

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111021

A. Iranmanesh, V. Ilderem, A. Solheim, C. Blair, L. Lam, F. Haas, S. Leibiger, L. Bouknight, R. Lahri, M. Biswal, B. Bastani

引用次数: 10

A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography 采用x射线光刻技术制备的0.5 μ m全尺度双能级金属全平面互连结构

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.110982

D. Moy, L.K. Wang, D. Seeger, J. Silverman, C. Hu, F. Kaufman, A. Ray, M. Jaso, N. Mazzeo

引用次数: 1

A process technology for a 5-volt only 4 Mb flash EEPROM with an 8.6 UM2 cell 具有8.6 UM2单元的5伏仅4mb闪存EEPROM的工艺技术

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111040

B. Riemenschneider, A. Esquivel, J. Paterson, M. Gill, S. Lin, J. Schreck, D. McElroy, P. Truong, R. Bussey, B. Ashmore, M. McConnell, H. Stiegler, P. Shah

引用次数: 3

STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts stripe -一种高速VLSI双极技术，具有自对准的单多基极和亚微米发射极触点

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111004

C. Drowley, W.M. Huang, P. Vande Voorde, D. Pettengill, J. Turner, A. Kapoor, C. Lin, G. Burton, S. J. Rosner, K. Brigham, H. Fu, S. Oh, M. Scott, S. Chiang, A. Wang

引用次数: 6

Reliability degradation mechanism of the ultra-thin tunneling oxide by the post-annealing 超薄隧道氧化物后退火可靠性退化机理研究

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111038

K. Yoneda, Y. Fukuzaki, K. Satoh, Y. Hata, Y. Todokoro, M. Inoue

引用次数: 3

Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology 利用“累积键合集成电路”(CUBIC)技术制造三维集成电路

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111025

Y. Hayashi, S. Wada, K. Kajiyana, K. Oyama, R. Koh, S. Takahashi, T. Kunio

引用次数: 22

A fundamental performance limit of optimized 3.3 V subquarter micron fully overlapped LDD MOSFETs 优化后的3.3 V亚四分之一微米完全重叠LDD mosfet的基本性能极限

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111000

A. Bryant, B. El-Kareh, T. Furukawa, W. Noble, E. Nowak, W. Tonti

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引用次数: 8

Role of surface passivation in the integrated processing of MOS structures 表面钝化在MOS结构集成加工中的作用

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111036

M. Offenberg, M. Liehr, S. Kasi, G. Rubloff

引用次数: 1