发布求助
文献互助 智能选刊 最新文献

Digest of Technical Papers.1990 Symposium on VLSI Technology最新文献

筛选
英文 中文
A high-performance 0.5-μm BiCMOS technology with 3.3-V CMOS devices 采用3.3 v CMOS器件的高性能0.5 μ m BiCMOS技术
Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111022
E. D. Johnson, T. Hook, J. Bertsch, Y. Taur, C. Chen, H.J. Shin, S. Ramaswamy, A. Edenfeld, C. Alcorn
{"title":"A high-performance 0.5-μm BiCMOS technology with 3.3-V CMOS devices","authors":"E. D. Johnson, T. Hook, J. Bertsch, Y. Taur, C. Chen, H.J. Shin, S. Ramaswamy, A. Edenfeld, C. Alcorn","doi":"10.1109/VLSIT.1990.111022","DOIUrl":"https://doi.org/10.1109/VLSIT.1990.111022","url":null,"abstract":"A BiCMOS technology is described that is built on an optimized 3.3-V 0.5-μm CMOS base process. A high-performance single-polysilicon npn transistor with a cutoff frequency of 15 GHz is integrated using CMOS-compatible heat cycles. Novel level-shifted BiCMOS circuit techniques are employed to allow the bipolar devices to operate at a higher voltage (4.1 V) without performance degradation while keeping the CMOS devices at 3.3 V for reliable operation. With such a circuit, performance gain over CMOS is achieved at a reduced channel length and voltage. This demonstrates the feasibility of scaling BiCMOS technology to reduced channel length and power supply voltage","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124886531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Tungsten silicide/titanium nitride compound gate for submicron CMOSFET 用于亚微米CMOSFET的硅化钨/氮化钛复合栅极
Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111035
K.T. Kim, L.G. Kang, T. Park, Y. Shin, J. Park, C.J. Lee, C. Hwang, D. Chin, Y.E. Park
{"title":"Tungsten silicide/titanium nitride compound gate for submicron CMOSFET","authors":"K.T. Kim, L.G. Kang, T. Park, Y. Shin, J. Park, C.J. Lee, C. Hwang, D. Chin, Y.E. Park","doi":"10.1109/VLSIT.1990.111035","DOIUrl":"https://doi.org/10.1109/VLSIT.1990.111035","url":null,"abstract":"Experimental results are presented for a WSi2/TiN compound-gate MOSFET with a near-midgap work function ranging from 4.63 to 4.75 eV and low resistivity. Sheet resistances of the compound gate and the conventional n+ gate with and without the interconnection layer are studied, and it is shown that the compound gate materials are an adequate interconnection layer. When positive bias is applied to the gate, the tunneling current of a compound-gate MOS is similar to that of an n+-poly-gate MOS with and without interconnection layer. This is because electrons are tunneling through the oxide from the silicon substrate to the gate, so that the barrier height is defined dominantly by the oxide barrier from the silicon substrate","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125953764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Drain-structure design for reduced band-to-band and band-to-defect tunneling leakage 减少带间和带间隧道渗漏的排水结构设计
Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111012
T. Hori
{"title":"Drain-structure design for reduced band-to-band and band-to-defect tunneling leakage","authors":"T. Hori","doi":"10.1109/VLSIT.1990.111012","DOIUrl":"https://doi.org/10.1109/VLSIT.1990.111012","url":null,"abstract":"The author investigates and models gate-induced drain leakage (GIDL) effects over a wide variety of drain structures, including <e1>n </e1><sup>+</sup>-As/<e1>n</e1><sup>-</sup>-P combinations, <e1>n</e1> <sup>-</sup> implant doses (<e1>N</e1><sub>n-</sub>), and spacer lengths (L<sub>s</sub>). An analytical model taking account of nm-order As doping modulation is proposed to explain the enhanced GIDL for <e1>n</e1><sup>+</sup>-As FETs and the suppressed B-B tunneling with increasing <e1>N</e1><sub>n-</sub> for large-tilt-angle implanted-drain devices. Band-to-defect tunneling via interface states is also simulated and found to limit device performance, as well as hot-carrier reliability, much more severely than B-B tunneling. Based on the above understanding, drain-structure design is discussed in view of both performance and reliability","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116754413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信