Digest of Technical Papers.1990 Symposium on VLSI Technology

New well structure for deep sub-μm CMOS/BiCMOS using thin epitaxy over buried layer and trench isolation

Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111019 Y. Okazaki, T. Kobayashi, S. Konaka, T. Morimoto, M. Takahashi, K. Imai, Y. Kado

A novel CBi-CMOS technology by DIIP process

Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111016 K. Higashitani, H. Honda, K. Ueda, M. Hatanaka, S. Nagao

0.6 μm, single poly advanced BiCMOS (ABiC IV) technology for ASIC applications

Pub Date : 1990-06-04 DOI: 10.1109/VLSIT.1990.111021 A. Iranmanesh, V. Ilderem, A. Solheim, C. Blair, L. Lam, F. Haas, S. Leibiger, L. Bouknight, R. Lahri, M. Biswal, B. Bastani