C. Drowley, W.M. Huang, P. Vande Voorde, D. Pettengill, J. Turner, A. Kapoor, C. Lin, G. Burton, S. J. Rosner, K. Brigham, H. Fu, S. Oh, M. Scott, S. Chiang, A. Wang
{"title":"stripe -一种高速VLSI双极技术，具有自对准的单多基极和亚微米发射极触点","authors":"C. Drowley, W.M. Huang, P. Vande Voorde, D. Pettengill, J. Turner, A. Kapoor, C. Lin, G. Burton, S. J. Rosner, K. Brigham, H. Fu, S. Oh, M. Scott, S. Chiang, A. Wang","doi":"10.1109/VLSIT.1990.111004","DOIUrl":null,"url":null,"abstract":"Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is achieved with conventional 0.8-μm optical lithography. These dimensions are comparable to those achievable with double-poly structures. Using the STRIPE structure, transistors have been fabricated with cutoff frequency as high as 33.8 GHz","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts\",\"authors\":\"C. Drowley, W.M. Huang, P. Vande Voorde, D. Pettengill, J. Turner, A. Kapoor, C. Lin, G. Burton, S. J. Rosner, K. Brigham, H. Fu, S. Oh, M. Scott, S. Chiang, A. Wang\",\"doi\":\"10.1109/VLSIT.1990.111004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is achieved with conventional 0.8-μm optical lithography. These dimensions are comparable to those achievable with double-poly structures. Using the STRIPE structure, transistors have been fabricated with cutoff frequency as high as 33.8 GHz\",\"PeriodicalId\":441541,\"journal\":{\"name\":\"Digest of Technical Papers.1990 Symposium on VLSI Technology\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers.1990 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1990.111004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers.1990 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1990.111004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts
Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is achieved with conventional 0.8-μm optical lithography. These dimensions are comparable to those achievable with double-poly structures. Using the STRIPE structure, transistors have been fabricated with cutoff frequency as high as 33.8 GHz
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