发布求助
文献互助 智能选刊 最新文献

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献

筛选
英文 中文
Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules 比较SiC功率模块中SiC MOSFET本构体二极管与附加SiC肖特基二极管的开关性能
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799946
Daniel Martin, P. Killeen, W. A. Curbow, Brett Sparkman, Lauren E. Kegley, T. McNutt
{"title":"Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules","authors":"Daniel Martin, P. Killeen, W. A. Curbow, Brett Sparkman, Lauren E. Kegley, T. McNutt","doi":"10.1109/WIPDA.2016.7799946","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799946","url":null,"abstract":"This paper presents a comparison of the inductive switching losses between a 1200 V SiC MOSFET half bridge power module with anti-parallel SiC schottky barrier diodes (SBD) versus the same power module package utilizing only the intrinsic body diode of the SiC MOSFETs. SBDs can significantly reduce switching losses by reducing the reverse recovery losses experienced during hard-switching events. However, the inclusion of SBDs reduces the chip area available in the module for MOSFETs — thus limiting the current capability of the end product and increasing the cost per amp. This paper investigates the tradeoff between using both SiC MOSFETs and SBDs versus using only SiC MOSFETs in a high performance SiC power module. Understanding the switching performace of each configuration will enable customized power module solutions optimized to maximize performance of the desired application.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133128157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Analysis and mitigation of reflected wave voltages and currents in WBG devices based motor drives 基于电机驱动的WBG器件中反射波电压和电流的分析和缓解
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799956
B. Narayanasamy, A. Sathyanarayanan, A. Deshpande, F. Luo
{"title":"Analysis and mitigation of reflected wave voltages and currents in WBG devices based motor drives","authors":"B. Narayanasamy, A. Sathyanarayanan, A. Deshpande, F. Luo","doi":"10.1109/WIPDA.2016.7799956","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799956","url":null,"abstract":"In inverter based motor drives, the fast switching speeds of the power devices along with the cable, result in overvoltage at the motor end. Corresponding to the overvoltage at the motor end, there are currents at the inverter end. While the overvoltage increases the stress on motor and insulation, the load parasitics along with the cable increases the switching loss of the power devices. These effects are more pronounced in converters using WBG devices because of faster switching times. Previous works have only studied either over-voltages & currents in 2-L converters. The 2-L converters have low source and high load impedances. This work involves the study of the effect of inductive source impedance and RC terminal network on the reflected wave phenomenon and the switching loss of the device. Simulation and experimental results are shown to verify the analysis.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131154224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Analysis of transient behavior of SiC power MOSFETs based on surface potential model and its application to boost converter 基于表面电位模型的SiC功率mosfet暂态行为分析及其在升压变换器中的应用
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799917
T. Okuda, Yohei Nakamura, T. Hikihara, Michihiro Shintani, Takashi Sato
{"title":"Analysis of transient behavior of SiC power MOSFETs based on surface potential model and its application to boost converter","authors":"T. Okuda, Yohei Nakamura, T. Hikihara, Michihiro Shintani, Takashi Sato","doi":"10.1109/WIPDA.2016.7799917","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799917","url":null,"abstract":"A DC-DC boost converter is fabricated using a SiC MOSFET and the characteristics are analyzed with SPICE simulation. We use a device model based on surface potential for SiC MOSFET, which was proposed this year by our group. It is found that the SPICE simulation well explains the experimental waveforms of the fabricated boost converter even at very high frequencies of 1–5 MHz. This result suggests that the proposed device model based on surface potential is applicable to design high-frequency power converters.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133812808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Online condition monitoring of SiC devices using intelligent gate drive for converter performance improvement 利用智能栅极驱动对SiC器件进行在线状态监测，提高变换器性能
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799934
Jacob Dyer, Zheyu Zhang, Fred Wang, D. Costinett, L. Tolbert, B. Blalock
{"title":"Online condition monitoring of SiC devices using intelligent gate drive for converter performance improvement","authors":"Jacob Dyer, Zheyu Zhang, Fred Wang, D. Costinett, L. Tolbert, B. Blalock","doi":"10.1109/WIPDA.2016.7799934","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799934","url":null,"abstract":"Many intelligent gate drivers being designed for new state-of-the-art WBG devices typically only focus on protection and driving capabilities of the devices. This paper introduces an intelligent gate driver that incorporates online condition monitoring of the WBG devices. For this specific case study, three timing conditions (turn-off delay time, turn-off time, and voltage commutation time) of a silicon carbide (SiC) device are online monitored. This online monitoring system is achieved through gate driver assist circuits and a micro-controller. These conditions are then utilized to develop converter-level benefits for the converter application the SiC devices are placed in. Junction temperature monitoring is realized through turn-off delay time monitoring. Dead-time optimization is achieved with turn-off time monitoring. Dead-time compensation is obtained with turn-off time and voltage commutation time monitoring. The case study converter assembled for testing purposes is a half-bridge inverter using two SiC devices in a phase-leg configuration. All timing conditions are correctly monitored within reasonable difference of the actual condition time. A calibration curve was created to give a direct relationship between turn-off delay time and junction temperature. The half-bridge inverter can operate at 600 Vdc input and successfully obtain a junction temperature measurement through monitored td_off and the calibration curve. Furthermore, the proposed online condition monitoring system is transistor based and suitable for the chip level integration, enabling this practical approach to be cost-effective for end users.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127072192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A circuit simulation model for V-groove SiC power MOSFET v型沟槽SiC功率MOSFET电路仿真模型
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799954
Michihiro Shintani, Kazuki Oishi, R. Zhou, Masayuki Hiromoto, Takashi Sato
{"title":"A circuit simulation model for V-groove SiC power MOSFET","authors":"Michihiro Shintani, Kazuki Oishi, R. Zhou, Masayuki Hiromoto, Takashi Sato","doi":"10.1109/WIPDA.2016.7799954","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799954","url":null,"abstract":"In this paper, a novel circuit simulation model for V-groove SiC power MOSFET with buried P-layers is proposed. By considering the structure of the MOSFET, bias dependence of on-resistance and the kink in the terminal capacitance are represented in the proposed model. Through experiments using a V-groove SiC MOSFET, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Switching characterization of vertical GaN PiN diodes 垂直GaN管脚二极管的开关特性
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799924
C. Matthews, J. Flicker, R. Kaplar, M. V. Van Heukelom, S. Attcity, I. Kizilyalli, O. Aktas
{"title":"Switching characterization of vertical GaN PiN diodes","authors":"C. Matthews, J. Flicker, R. Kaplar, M. V. Van Heukelom, S. Attcity, I. Kizilyalli, O. Aktas","doi":"10.1109/WIPDA.2016.7799924","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799924","url":null,"abstract":"The switching characteristics of vertical Gallium Nitride (v-GaN) diodes grown on GaN substrates are reported. v-GaN diodes were tested in a Double-Pulse Test Circuit (DPTC) and compared to test results for SiC Schottky Barrier Diodes (SBDs) and Si PiN diodes. The reported switching characteristics show that GaN diodes, like SiC SBDs, exhibit nearly negligible reverse recovery current compared to traditional Si PiN diodes. The reverse recovery for the v-GaN PiN diodes is limited by parasitics in the DPTC, precluding extraction of a meaningful recovery time. These results are very encouraging for power electronics based on v-GaN and demonstrate the potential for very fast, low-loss switching for these devices.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"253 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134202713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A low surge voltage and fast speed gate driver for SiC MOSFET with switched capacitor circuit 一种基于开关电容电路的低浪涌电压快速栅极驱动电路
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799953
Fei Mo, J. Furuta, Kazutoshi Kobayashi
{"title":"A low surge voltage and fast speed gate driver for SiC MOSFET with switched capacitor circuit","authors":"Fei Mo, J. Furuta, Kazutoshi Kobayashi","doi":"10.1109/WIPDA.2016.7799953","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799953","url":null,"abstract":"We propose a low surge voltage and fast speed gate driver with switched capacitor circuit for Silicon-Carbide (SiC) MOSFET. Because of the high switching frequency of SiC MOSFET, the surge voltage becomes a serious problem which cause a high switching loss and may break the SiC MOSFET. There is a trade-off between surge voltage and switching speed. It is hard to fulfill both of them at the same time by using conventional gate drivers. With the switched capacitor circuit, the proposed gate driver can reduce the surge voltage by 17.2% and the switching time by 8.4% at the turn-off transient. Compared to conventional gate drivers without the switched capacitor circuit, the proposed gate driver can generate negative gate-source voltage without any isolated power supply.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"352 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115975866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
SiC-CMOS digital circuits for high temperature power conversion 用于高温功率转换的SiC-CMOS数字电路
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799942
M. Barlow, A. Francis, N. Chiolino, J. Holmes, A. Abbasi, H. Mantooth
{"title":"SiC-CMOS digital circuits for high temperature power conversion","authors":"M. Barlow, A. Francis, N. Chiolino, J. Holmes, A. Abbasi, H. Mantooth","doi":"10.1109/WIPDA.2016.7799942","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799942","url":null,"abstract":"Wide bandgap semiconductors allow for the potential of expanded temperature ranges for power and mixed-signal applications. Developments in a Silicon Carbide (SiC) CMOS integrated circuit process have demonstrated high temperature operation at 400 °C and above, paving the way for a SiC-controlled SiC power electronics system capable of operating at high temperatures. A two-phase clock generator with adjustable dead time was developed in a SiC CMOS integrated circuit process. High temperature testing evaluated the design's operation at 470 °C for more than 80 hours. To evaluate the clock generator, a synchronous buck converter was designed using SiC power MOSFETs. Proper conversion was demonstrated with a switching frequency of 250 kHz.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"54 85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115270686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Spice modeling of 4H-SiC MOSFET based on the advanced mobility model 基于先进迁移率模型的4H-SiC MOSFET Spice建模
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 1900-01-01 DOI: 10.1109/WIPDA.2016.7887813
Yuming Zhou, Y. Li, B. Wang
{"title":"Spice modeling of 4H-SiC MOSFET based on the advanced mobility model","authors":"Yuming Zhou, Y. Li, B. Wang","doi":"10.1109/WIPDA.2016.7887813","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7887813","url":null,"abstract":"SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key parameters in this advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The transfer characteristics of the developed 4H-SiC MOSFET model have been validated with the production Datasheet, the switching characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching characteristics of 4H-SiC MOSFET has been quantitatively discussed, reasonable gate driving voltage of 4HSiC MOSFET with different interface-trap densities has been revealed.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122255038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信