SiC-CMOS digital circuits for high temperature power conversion

Abstract

Wide bandgap semiconductors allow for the potential of expanded temperature ranges for power and mixed-signal applications. Developments in a Silicon Carbide (SiC) CMOS integrated circuit process have demonstrated high temperature operation at 400 °C and above, paving the way for a SiC-controlled SiC power electronics system capable of operating at high temperatures. A two-phase clock generator with adjustable dead time was developed in a SiC CMOS integrated circuit process. High temperature testing evaluated the design's operation at 470 °C for more than 80 hours. To evaluate the clock generator, a synchronous buck converter was designed using SiC power MOSFETs. Proper conversion was demonstrated with a switching frequency of 250 kHz.