2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献

UIS failure mechanism of SiC power MOSFETs SiC功率mosfet的失效机理

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-12-29 DOI: 10.1109/WIPDA.2016.7799921

A. Fayyaz, A. Castellazzi, G. Romano, M. Riccio, A. Irace, J. Urresti, N. Wright

引用次数: 38

Integrated Bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly 集成双向SiC MOSFET功率开关，用于高效，功率密集和可靠的矩阵变换器组件

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-12-29 DOI: 10.1109/WIPDA.2016.7799935

P. Lasserre, D.W.H. Lambert, A. Castellazzi

{"title":"Integrated Bi-directional SiC MOSFET power switches for efficient, power dense and reliable matrix converter assembly","authors":"P. Lasserre, D.W.H. Lambert, A. Castellazzi","doi":"10.1109/WIPDA.2016.7799935","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799935","url":null,"abstract":"This paper presents an innovative device packaging and system integration approach aimed at optimizing the electro-thermal, electro-magnetic and thermo-mechanical performance of the switches in a power converter. In particular, the focus is on state-of-the-art commercially available silicon-carbide (SiC) power MOSFETs used within a matrix converter topology. The improvements at switch level over conventional packaging and integration solutions translate into higher efficiency, power density (in terms of volume and weight) and reliability at system level. In view of typical application domains (e.g., renewable energies, solid-state transformation, smart grids, electric transport), requiring harsh environment withstand capability with high reliability and availability levels, an AC-to-AC matrix converter is chosen as a particularly relevant case study. The paper also addresses two aspects of growing relevance: reliable manufacturability and preventive maintenance compatible modular system assembly for reduced impact of single component failure on system availability.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131832349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications SiC技术对三端口有源桥式变换器储能集成固态变压器应用的影响

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-08 DOI: 10.1109/WIPDA.2016.7799914

Zhenyu Wang, A. Castellazzi, Sarah Saeed, Ángel Navarro-Rodríguez, P. García

引用次数: 9

Impulse transformer based secondary-side self-powered gate-driver for wide-range PWM operation of SiC power MOSFETs 基于脉冲变压器的二次侧自供电栅极驱动器用于SiC功率mosfet的宽范围PWM工作

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-08 DOI: 10.1109/WIPDA.2016.7799910

Jorge García, E. Gurpinar, A. Castellazzi

引用次数: 6

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions SiC和GaN功率晶体管在硬开关和软开关条件下的开关能量评估

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-08 DOI: 10.1109/WIPDA.2016.7799922

Ke Li, Paul L. Evans, Mark C. Johnson

引用次数: 18

Analysis and loss comparison of megahertz high voltage isolated DC/DC converters utilizing integrated SiC MOSFET module 集成SiC MOSFET模块的兆赫高压隔离DC/DC变换器的分析和损耗比较

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799955

Suxuan Guo, Pengkun Liu, Ruiyang Yu, Liqi Zhang, A. Huang

{"title":"Analysis and loss comparison of megahertz high voltage isolated DC/DC converters utilizing integrated SiC MOSFET module","authors":"Suxuan Guo, Pengkun Liu, Ruiyang Yu, Liqi Zhang, A. Huang","doi":"10.1109/WIPDA.2016.7799955","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799955","url":null,"abstract":"Silicon Carbide (SiC) MOSFETs are being increasingly utilized in medium and high power electronics converters (>1 kW) because of the significantly lower switching and conduction losses when compared with conventional power switches such as the Si IGBT. SiC MOSFET based converters operating at high frequency can achieve high efficiency and high power density at the same time. Minimum switching loss can be achieved in the SiC MOSFET with carefully designed gate driving condition and DC link layout, such as the integrated SiC MOSFET module discussed in this paper. Multi-megahertz switching frequency could be realized by the proposed SiC MOSFET module with proper soft switching topology. This paper analyzes three isolated DC/DC converters, namely the asymmetrical half bridge converter, phase shift full bridge converter, and LLC resonant converter. The loss model of the SiC MOSFET is developed and utilized in the analysis. Comparisons are carried out from the device loss and soft switching requirement point of view. The LLC resonant converter is deemed more suitable for multi-megahertz application. A 4.5 kW 1.2 MHz LLC resonant converter prototype is developed and it demonstrates a peak efficiency of 97% at 4 kW.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126037482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

Comparison of multi-level metallization structure and conventional metallization structure in lateral-type AlGaN/GaN HFETs 横向型AlGaN/GaN hfet中多层金属化结构与常规金属化结构的比较

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799931

S. Oh, T. Jang, Y. Jo, Hwa-Young Ko, J. Kwak, J. Ryou

引用次数: 1

Robustness aspects of 600V GaN-on-Si based power cascoded HFET 600V GaN-on-Si功率级联fet的鲁棒性

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799930

D. Veereddy, T. McDonald, J. Ambrus, Alfonso Diy, Stuart Cardwell, Bhargav Pandya, R. Garg, M. Imam

引用次数: 3

High current (650V–200A, 1200V–100A) single SiC diodes 高电流(650V-200A, 1200V-100A)单SiC二极管

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799927

J. Hostetler, M. O'Grady, W. Simon, Xing Huang, M. Fox, A. Bhalla

引用次数: 2

GaN solar microinverter with only 4 low side devices GaN太阳能微逆变器只有4个低侧器件

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799907

Ankit Gupta, Abhijit Kulkarni, S. Mazumder

引用次数: 5