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2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献

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Design and evaluation of press-pack SiC MOSFET 压封装SiC MOSFET的设计与评估
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799901
Nan Zhu, Min Chen, Dehong Xu, H. Mantooth, M. Glover
{"title":"Design and evaluation of press-pack SiC MOSFET","authors":"Nan Zhu, Min Chen, Dehong Xu, H. Mantooth, M. Glover","doi":"10.1109/WIPDA.2016.7799901","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799901","url":null,"abstract":"This paper investigates the advantages of combining press-pack packaging and SiC MOSFETs to extend the application of SiC devices into the high power range. The feasibility of press-pack packaging on SiC MOSFET is illustrated by using extremely small and flexible contact pins called \"fuzz buttons\" in a low-profile interposer. The layout of the press-pack is designed to have very low main power loop parasitic inductance, gate loop inductance, common source inductance and provide a good balance between paralleled devices. Since the press-pack does not provide internal insulation between the active device and the heatsink, the heatsink is included in the power loop. To minimize the parasitic loop inductance, a water-cooled micro-channel heatsink less than 3 mm thick is used to obtain adequate heat dissipation, electric current carrying capability, and insulation between the cooling loop and the electrical loop. The structure and manufacturing process flow of the press-pack SiC MOSFET are provided. The thermal and electrical performances of the proposed press-pack structure are experimentally tested as well.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132612123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing 镁注入和活化退火的垂直GaN结势垒肖特基二极管
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799965
A. Koehler, T. Anderson, M. Tadjer, B. Feigelson, K. Hobart, F. Kub, A. Nath, David I. Shahin
{"title":"Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing","authors":"A. Koehler, T. Anderson, M. Tadjer, B. Feigelson, K. Hobart, F. Kub, A. Nath, David I. Shahin","doi":"10.1109/WIPDA.2016.7799965","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799965","url":null,"abstract":"Vertical GaN Junction barrier Schottky (JBS) diodes are fabricated on hydride vapor phase epitaxy (HVPE) GaN substrates. The p-type JBS gridded regions were formed by selective area doping by Mg ion implantation followed by an activation anneal. Implantation was performed into a 10 μm thick unintentionally doped GaN layer grown by metal organic chemical vapor deposition (MOCVD). Evaporating Pd/Au formed the anode contacts and the cathode was formed of Ti/Al/Ni/Au. Activation of the Mg-implanted GaN was achieved by implementing a three part process, which includes: 1) capping the GaN surface with sputtered AlN, 2) annealing in a 350 PSI nitrogen overpressure environment, and 3) performing a multicycle rapid thermal anneal (MRTA) with a peak temperature of 1350 °C. In addition to the JBS structures, Schottky barrier diodes (SBDs) and PiN diodes were also fabricated.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132274670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-wing ladder resonant multilevel converter 单翼阶梯谐振多电平变换器
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799962
B. Curuvija, X. Lyu, Yanchao Li, Dong Cao
{"title":"Single-wing ladder resonant multilevel converter","authors":"B. Curuvija, X. Lyu, Yanchao Li, Dong Cao","doi":"10.1109/WIPDA.2016.7799962","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799962","url":null,"abstract":"This paper presents an innovative resonant multilevel modular bidirectional dc-dc switched-capacitor converter based on GaN switching devices. Proposed converter achieves the following advantages; soft switching, low voltage device rating, boost or buck mode, common ground, high conversion ratio, variety of environment temperature operation, simple control algorithm and modular structure. The proposed single-wing ladder resonant multilevel converter is composed of COG temperature compensating ceramic capacitors along with GaN switching devices that can handle high switching frequency hence, high power density. Converter proposed in this paper has superior advantages over the traditional multilevel modular switched capacitor dc-dc converters due to its modular structure, high efficiency, common ground, low voltage device stress, and simplicity of the control algorithm.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127765414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Module-level paralleling of vertical GaN PiN diodes 垂直GaN引脚二极管的模块级并联
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799925
J. Flicker, R. Brocato, J. Delhotal, J. Neely, Bjorn Sumner, J. Dickerson, R. Kaplar
{"title":"Module-level paralleling of vertical GaN PiN diodes","authors":"J. Flicker, R. Brocato, J. Delhotal, J. Neely, Bjorn Sumner, J. Dickerson, R. Kaplar","doi":"10.1109/WIPDA.2016.7799925","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799925","url":null,"abstract":"The effects of paralleling low-current vertical Gallium Nitride (v-GaN) diodes in a custom power module are reported. Four paralleled v-GaN diodes were demonstrated to operate in a buck converter at 1.3 Apeak (792 mArms) at 240 V and 15 kHz switching frequency. Additionally, high-fidelity SPICE simulations demonstrate the effects of device parameter variation on power sharing in a power module. The device parameters studied were found to have a sub-linear relationship with power sharing, indicating a relaxed need to bin parts for paralleling. This result is very encouraging for power electronics based on low-current v-GaN and demonstrates its potential for use in high-power systems.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115535620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of intrinsic energy losses in unipolar power switches 单极功率开关本征能量损耗的比较
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799943
Xueqing Li, A. Bhalla
{"title":"Comparison of intrinsic energy losses in unipolar power switches","authors":"Xueqing Li, A. Bhalla","doi":"10.1109/WIPDA.2016.7799943","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799943","url":null,"abstract":"We explore the intrinsic loss in power switches seen when they undergo charging and discharging of their output capacitance. The intrinsic loss occurs even if switching is carried out at zero current and no on-state current is conducted, and accidental turn-on is avoided. The intrinsic loss cannot be eliminated by using soft-switching schemes and essentially sets an upper limit for the switching speed of the soft-switching converters. This work measures and compares the intrinsic energy losses in the popular commercial unipolar power switches including Si superjunction MOSFETs, GaN cascode, SiC cascode, and SiC MOSFETs. The intrinsic loss mechanisms of these devices are also discussed. A simple experiment setup is proposed and used to measure the intrinsic energy losses. The experimental results show that the SiC cascode has the lowest intrinsic energy loss.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114733953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The next generation of high voltage (10 kV) silicon carbide power modules 下一代高压(10kv)碳化硅功率模块
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799900
B. Passmore, Z. Cole, B. McGee, M. Wells, J. Stabach, Josh Bradshaw, R. Shaw, Daniel Martin, T. McNutt, Edward VanBrunt, B. Hull, D. Grider
{"title":"The next generation of high voltage (10 kV) silicon carbide power modules","authors":"B. Passmore, Z. Cole, B. McGee, M. Wells, J. Stabach, Josh Bradshaw, R. Shaw, Daniel Martin, T. McNutt, Edward VanBrunt, B. Hull, D. Grider","doi":"10.1109/WIPDA.2016.7799900","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799900","url":null,"abstract":"In this work, a novel high performance 10 kV / 240 A silicon carbide (SiC) metal-oxide field-effect transistor (MOSFET) power module design is presented. The key features for this power module include reworkability, low parasitic design, low thermal resistance design, equal current sharing of high voltage power MOSFETs, and low profile and small form factor. The design tradeoffs to achieve these characteristics will be discussed. In addition, the static and dynamic electric characteristics will be presented and compared to an off-the-shelf silicon (Si) counterpart.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129465328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
Power loss model for MHz critical mode power factor correction circuits MHz临界模式功率因数校正电路的功率损耗模型
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799952
Yue Zhang, Chengcheng Yao, Xuan Zhang, Huanyu Chen, He Li, Jin Wang
{"title":"Power loss model for MHz critical mode power factor correction circuits","authors":"Yue Zhang, Chengcheng Yao, Xuan Zhang, Huanyu Chen, He Li, Jin Wang","doi":"10.1109/WIPDA.2016.7799952","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799952","url":null,"abstract":"Wide bandgap devices (WBGs) allow Power Factor Correction (PFC) circuits to operate at MHz frequency which leads to a better power density. Compared with kHz operation, MHz PFC in critical conduction mode (CrM) yields larger inductor valley current during the switch soft turn-on. Moreover, the input current distortion near grid voltage zero crossing has not been taken into account in the traditional model. As a result, the traditional PFC design tool shows major inaccuracy in switching frequency, inductor current envolopes and power loss estimation. The paper analyzes the problems in the traditional model, and proposes an improved power loss model to aid the design of MHz CrM PFC. Experimental results are shown to prove the accuracy of the proposed model.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129672171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Doping engineering to enhance performance of a silicon carbide power device 掺杂工程提高碳化硅功率器件的性能
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799918
R. Radhakrishnan, M. F. Macmillan, R. Woodin
{"title":"Doping engineering to enhance performance of a silicon carbide power device","authors":"R. Radhakrishnan, M. F. Macmillan, R. Woodin","doi":"10.1109/WIPDA.2016.7799918","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799918","url":null,"abstract":"The doping of the drift layer of a 1-D SiC power device is designed to vary in steps, instead of traditional constant doping, and we show an experimental reduction of the resistance of the drift region below that achieved with constant doping by 7.34%. Sensitivity of doping design to material properties affects the improvement in characteristics. Stepped epitaxial doping presented here permits shrinkage of ∼ 3% of the die in typical commercial devices between 600 V and 1700 V while keeping the same electrical characteristics. Higher number of doping steps approach the ideal of an accurately graded epitaxy, with a tradeoff between increasing performance gains and increasing process complexity.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129131046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO2 followed by POCl3 annealing 退火温度对SiC外延层表面钝化的影响
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799944
T. Okuda, Takuma Kobayashi, T. Kimoto, J. Suda
{"title":"Impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO2 followed by POCl3 annealing","authors":"T. Okuda, Takuma Kobayashi, T. Kimoto, J. Suda","doi":"10.1109/WIPDA.2016.7799944","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799944","url":null,"abstract":"We investigate an impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO<inf>2</inf> followed by POCl<inf>3</inf> annealing. The POCl<inf>3</inf> annealing process consists of two steps: (i) thermal annealing in POCl<inf>3</inf> and (ii) subsequent thermal annealing in pure N<inf>2</inf>. We find that the annealing temperature of the subsequent N<inf>2</inf> annealing is important to reduce surface recombination on SiC. For surface passivation, N<inf>2</inf> annealing at high temperature at 1000° C is necessary.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130807411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A power supply circuit for gate driver of GaN-based flying capacitor multi-level converters 一种氮化镓飞电容多电平变换器栅极驱动电源电路
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799909
Zichao Ye, R. Pilawa-Podgurski
{"title":"A power supply circuit for gate driver of GaN-based flying capacitor multi-level converters","authors":"Zichao Ye, R. Pilawa-Podgurski","doi":"10.1109/WIPDA.2016.7799909","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799909","url":null,"abstract":"Recently, flying capacitor multi-level (FCML) converters with GaN power switches have received increased attention due to their potential to achieve high efficiency and high power density. However, one of the major challenges is providing power to the gate drive circuits, most of which are not ground referenced. The most common existing method utilizes isolated DC/DC converters, which are bulky, expensive and energy inefficient. This work introduces two new techniques that leverage inherent properties of the FCML topology and the GaN switches to provide gate drive power to the floating switches with minimum hardware requirements. The two methods, termed cascaded bootstrap and gate driven charge pump, are analyzed in details and their performance evaluated. A new power supply circuit combining the two techniques can help shrink the size of the converter, and further increase the converter's power density. Experimental results show that the proposed circuit is up to 5× more power efficient than conventional solutions, at 1/10 of the cost.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130404926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
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