2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献_第3页

Comparison study of LLC resonant circuit and two quasi dual active bridge circuits LLC谐振电路与两种准双有源桥电路的比较研究

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799906

Boxue Hu, Xuan Zhang, Lixing Fu, He Li, Chengcheng Yao, Yafeng Wang, Yousef Abdullah, Jin Wang

{"title":"Comparison study of LLC resonant circuit and two quasi dual active bridge circuits","authors":"Boxue Hu, Xuan Zhang, Lixing Fu, He Li, Chengcheng Yao, Yafeng Wang, Yousef Abdullah, Jin Wang","doi":"10.1109/WIPDA.2016.7799906","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799906","url":null,"abstract":"This paper presents a comparison study of three isolated DC/DC circuit topologies, LLC resonant circuit, phase shift bridge circuit and phase shift quasi switched capacitor (QSC) circuit. The device stress of three circuits is compared using total switching device power (SDP) which can be used as an indicator of circuit efficiency, device cooling requirement, device packaging requirement and cost of the power electronics converter. Transformer is the main passive component in the circuit that affects significantly the converter power density. The transformer area products (AP) of three circuits are thus calculated and compared. Device loss oriented circuit design is carried out on the three circuit topologies for 1 kW, 400 V to 48 V telecomm power supply application using commercially available GaN devices. Basing on the circuit design results, the device loss of three circuits is calculated and compared at various switching frequencies and load conditions. In the end, a 1 kW, 0.5 MHz, 400–48 V GaN device based phase shift QSC converter prototype is built and tested to verify the analysis and showcase the circuit performance.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124971575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A high-density, high-efficiency 1.2 kV SiC MOSFET module and gate drive circuit 一种高密度、高效率的1.2 kV SiC MOSFET模块及栅极驱动电路

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799908

C. Dimarino, Wenli Zhang, Nidhi Haryani, Qiong Wang, R. Burgos, D. Boroyevich

引用次数: 17

650V and 900V, 150A SiC Schottky diode for automotive applications 用于汽车应用的650V和900V, 150A SiC肖特基二极管

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799926

K. Chatty, Sujit Banerjee, K. Matocha

引用次数: 6

Identifications of thermal equivalent circuit for power MOSFETs through in-situ channel temperature estimation 基于原位通道温度估计的功率mosfet热等效电路辨识

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799958

Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, Takashi Sato

引用次数: 3

Slew rate control of a 600 V 55 mΩ GaN cascode 600 V 55 mΩ GaN级联码的转换率控制

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799963

Achim Endruschat, T. Heckel, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, M. Mârz, B. Eckardt, L. Frey

引用次数: 4

Comparative study of temperature sensitive electrical parameters (TSEP) of Si, SiC and GaN power devices Si、SiC和GaN功率器件温度敏感电参数(TSEP)的比较研究

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799957

Liqi Zhang, Pengkun Liu, Suxuan Guo, A. Huang

引用次数: 31

Highly linear temperature sensor using GaN-on-SiC heterojunction diode for Harsh environment applications 高度线性温度传感器，采用GaN-on-SiC异质结二极管，适用于恶劣环境

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799932

S. Madhusoodhanan, S. Koukourinkova, T. White, Zhong Chen, Yue Zhao, M. Ware

{"title":"Highly linear temperature sensor using GaN-on-SiC heterojunction diode for Harsh environment applications","authors":"S. Madhusoodhanan, S. Koukourinkova, T. White, Zhong Chen, Yue Zhao, M. Ware","doi":"10.1109/WIPDA.2016.7799932","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799932","url":null,"abstract":"In this work, high temperature diode sensors for harsh environment applications are fabricated and comprehensively characterized. The design of the sensors is based on gallium nitride (GaN) on silicon carbide (SiC) heterojunction structures. The GaN layer was grown by the molecular beam epitaxy (MBE) on an n-type SiC substrate. P-type doping of the GaN was achieved using the atomic magnesium (Mg) as a dopant. The heterojunction devices were fabricated using a concentric ring geometry with the diameters ranging from 400 μm to 1000 μm. Temperature dependent characteristics (Vf — T) of these heterojunction devices as well as their sensitivity (mV/K) are comprehensively characterized in a temperature range from 300 K to 650 K using reduced temperature steps. High temperature electrical measurements have demonstrated that these heterojunction devices have highly linear temperature dependent characteristics and are potentially usable as reliable temperature sensors up to at least 650K. Dedicated programs were used to extract the electrical parameters of the devices designed to operate as a temperature sensor.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134010566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

1.5 kW single phase CCM totem-pole PFC using 650V SiC cascodes 使用650V SiC级联编码的1.5 kW单相CCM图腾极PFC

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799915

Ke Zhu, M. O'Grady, J. Dodge, J. Bendel, J. Hostetler

引用次数: 10

1200V/200A FREEDM-pair: Loss and cost reduction analysis 1200V/200A freedm对:损耗和成本降低分析

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799928

Xiaoqing Song, A. Huang, Pengkun Liu, Liqi Zhang

{"title":"1200V/200A FREEDM-pair: Loss and cost reduction analysis","authors":"Xiaoqing Song, A. Huang, Pengkun Liu, Liqi Zhang","doi":"10.1109/WIPDA.2016.7799928","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799928","url":null,"abstract":"FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition. During the delay time, the current will be carried by the MOSFET only. During the turn-on, the SiC MOSFET and the IGBT can be turned on at the same time. Due to faster turn-on speed of the MOSFET, the IGBT is also turned on under the ZVS condition. Another advantage of the FREEDM-Pair is the better conduction characteristics compared to the Si IGBT by combining both the unipolar and bipolar devices' advantages in current conduction. Therefore the FREEDM-Pair provides an ideal option to realize the tradeoff between the cost and performance, and can be applied to main stream applications which currently use IGBT. Previously, the 6.5-kV FREEDM-Pairs results have been published and analyzed. In this paper, loss and cost reduction of a 1200V/200A FREEDM-Pair is presented and analyzed for the first time.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132052920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Potential of ultra-high voltage silicon carbide semiconductor devices 超高压碳化硅半导体器件的潜力

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799948

D. Johannesson, M. Nawaz, Keijo Jacobs, S. Norrga, H. Nee

引用次数: 21