{"title":"1200V/200A freedm对:损耗和成本降低分析","authors":"Xiaoqing Song, A. Huang, Pengkun Liu, Liqi Zhang","doi":"10.1109/WIPDA.2016.7799928","DOIUrl":null,"url":null,"abstract":"FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition. During the delay time, the current will be carried by the MOSFET only. During the turn-on, the SiC MOSFET and the IGBT can be turned on at the same time. Due to faster turn-on speed of the MOSFET, the IGBT is also turned on under the ZVS condition. Another advantage of the FREEDM-Pair is the better conduction characteristics compared to the Si IGBT by combining both the unipolar and bipolar devices' advantages in current conduction. Therefore the FREEDM-Pair provides an ideal option to realize the tradeoff between the cost and performance, and can be applied to main stream applications which currently use IGBT. Previously, the 6.5-kV FREEDM-Pairs results have been published and analyzed. In this paper, loss and cost reduction of a 1200V/200A FREEDM-Pair is presented and analyzed for the first time.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"1200V/200A FREEDM-pair: Loss and cost reduction analysis\",\"authors\":\"Xiaoqing Song, A. Huang, Pengkun Liu, Liqi Zhang\",\"doi\":\"10.1109/WIPDA.2016.7799928\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition. During the delay time, the current will be carried by the MOSFET only. During the turn-on, the SiC MOSFET and the IGBT can be turned on at the same time. Due to faster turn-on speed of the MOSFET, the IGBT is also turned on under the ZVS condition. Another advantage of the FREEDM-Pair is the better conduction characteristics compared to the Si IGBT by combining both the unipolar and bipolar devices' advantages in current conduction. Therefore the FREEDM-Pair provides an ideal option to realize the tradeoff between the cost and performance, and can be applied to main stream applications which currently use IGBT. Previously, the 6.5-kV FREEDM-Pairs results have been published and analyzed. In this paper, loss and cost reduction of a 1200V/200A FREEDM-Pair is presented and analyzed for the first time.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7799928\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1200V/200A FREEDM-pair: Loss and cost reduction analysis
FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition. During the delay time, the current will be carried by the MOSFET only. During the turn-on, the SiC MOSFET and the IGBT can be turned on at the same time. Due to faster turn-on speed of the MOSFET, the IGBT is also turned on under the ZVS condition. Another advantage of the FREEDM-Pair is the better conduction characteristics compared to the Si IGBT by combining both the unipolar and bipolar devices' advantages in current conduction. Therefore the FREEDM-Pair provides an ideal option to realize the tradeoff between the cost and performance, and can be applied to main stream applications which currently use IGBT. Previously, the 6.5-kV FREEDM-Pairs results have been published and analyzed. In this paper, loss and cost reduction of a 1200V/200A FREEDM-Pair is presented and analyzed for the first time.