Identifications of thermal equivalent circuit for power MOSFETs through in-situ channel temperature estimation

Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, Takashi Sato
{"title":"Identifications of thermal equivalent circuit for power MOSFETs through in-situ channel temperature estimation","authors":"Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, Takashi Sato","doi":"10.1109/WIPDA.2016.7799958","DOIUrl":null,"url":null,"abstract":"We propose a novel methodology for identifying thermal equivalent circuit of power MOSFETs through the measurement of thermal conduction characteristics. Drain current of the MOSFET is utilized to estimate channel temperature wherein heat is actually generated. Two measurement methods, i.e., constant voltage (CV) method and constant power (CP) method, are proposed. Those methods are different in the waveforms of input power for the target device. In experiments using a commercial SiC power MOSFET, good agreement is observed between impulse responses obtained from the two measurement methods.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We propose a novel methodology for identifying thermal equivalent circuit of power MOSFETs through the measurement of thermal conduction characteristics. Drain current of the MOSFET is utilized to estimate channel temperature wherein heat is actually generated. Two measurement methods, i.e., constant voltage (CV) method and constant power (CP) method, are proposed. Those methods are different in the waveforms of input power for the target device. In experiments using a commercial SiC power MOSFET, good agreement is observed between impulse responses obtained from the two measurement methods.
基于原位通道温度估计的功率mosfet热等效电路辨识
我们提出了一种通过测量热传导特性来识别功率mosfet热等效电路的新方法。利用MOSFET的漏极电流来估计通道温度,其中实际产生热量。提出了恒压法和恒功率法两种测量方法。这些方法在目标器件的输入功率波形上是不同的。在使用商用SiC功率MOSFET的实验中,观察到两种测量方法获得的脉冲响应之间有很好的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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