Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, Takashi Sato
{"title":"Identifications of thermal equivalent circuit for power MOSFETs through in-situ channel temperature estimation","authors":"Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, Takashi Sato","doi":"10.1109/WIPDA.2016.7799958","DOIUrl":null,"url":null,"abstract":"We propose a novel methodology for identifying thermal equivalent circuit of power MOSFETs through the measurement of thermal conduction characteristics. Drain current of the MOSFET is utilized to estimate channel temperature wherein heat is actually generated. Two measurement methods, i.e., constant voltage (CV) method and constant power (CP) method, are proposed. Those methods are different in the waveforms of input power for the target device. In experiments using a commercial SiC power MOSFET, good agreement is observed between impulse responses obtained from the two measurement methods.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We propose a novel methodology for identifying thermal equivalent circuit of power MOSFETs through the measurement of thermal conduction characteristics. Drain current of the MOSFET is utilized to estimate channel temperature wherein heat is actually generated. Two measurement methods, i.e., constant voltage (CV) method and constant power (CP) method, are proposed. Those methods are different in the waveforms of input power for the target device. In experiments using a commercial SiC power MOSFET, good agreement is observed between impulse responses obtained from the two measurement methods.