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2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献

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Multi-branch inductance extraction procedure for multi-chip power modules 多支路电感提取程序的多芯片电源模块
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799916
A. Lemmon, A. Shahabi, K. Miskell
{"title":"Multi-branch inductance extraction procedure for multi-chip power modules","authors":"A. Lemmon, A. Shahabi, K. Miskell","doi":"10.1109/WIPDA.2016.7799916","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799916","url":null,"abstract":"This paper describes a procedure for estimating the parasitic impedances associated with multi-chip power module (MCPM) interconnections and packaging at finer granularity than has been previously demonstrated. The methodology introduced here makes it possible to determine an estimate for the loop inductance at each individual semiconductor die position within the module geometry based on frequency-domain characterization of a single, specially-configured MCPM test subject. The impedance estimates produced by this procedure are shown to be in good agreement with values obtained through finite element analysis (FEA) using COMSOL.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116923785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Bidirectional, SiC module-based solid-state circuit breakers for 270 Vdc MEA/AEA systems 双向，基于SiC模块的固态断路器，用于270 Vdc MEA/AEA系统
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799912
J. Hayes, K. George, P. Killeen, B. Mcpherson, K. Olejniczak, T. McNutt
{"title":"Bidirectional, SiC module-based solid-state circuit breakers for 270 Vdc MEA/AEA systems","authors":"J. Hayes, K. George, P. Killeen, B. Mcpherson, K. Olejniczak, T. McNutt","doi":"10.1109/WIPDA.2016.7799912","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799912","url":null,"abstract":"Circuit protection devices and power distribution units for future More Electric / All Electric Aircraft (MEA/AEA) power systems require an increased level of control and intelligence along with fast-acting protection mechanisms. The trend towards utilizing solid-state power electronics for system-level protection of MEA/AEA systems has increased due to the many advantages provided over electromechanical solutions. Furthermore, the emergence and rapid maturation of Silicon Carbide (SiC) power semiconductor device technology has led to their preferred use in applications conventionally dominated by legacy Silicon (Si) technology. The superior electrical and thermal performance of SiC enables the implementation of rugged, power dense solid-state circuit breakers (SSCBs) that meet the current and future power demands of MEA/AEA power systems. This paper presents a SiC-based SSCB for applications within MEA/AEA power systems. The design and development of a SSCB technology demonstrator based on an all-SiC power module is presented. Experimental results demonstrating the interruption and extinction of a 250 A fault in 10 μs, and a 450 A fault in 70 μs on a 270 Vdc bus is given.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122095674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Development of a full bridge GaN HEMT converter for inductive power transfer application 电感功率传输用全桥GaN HEMT变换器的研制
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799905
O. C. Spro, Ole-Morten Midtgrd, T. Undeland, G. Guidi
{"title":"Development of a full bridge GaN HEMT converter for inductive power transfer application","authors":"O. C. Spro, Ole-Morten Midtgrd, T. Undeland, G. Guidi","doi":"10.1109/WIPDA.2016.7799905","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799905","url":null,"abstract":"This paper presents the results of the development and use of a full bridge GaN high electron mobility transistor (HEMT) converter used in an inductive power transfer (IPT) application. Experimental results using a Si MOSFETs converter in an IPT setup has previously been reported. By using GaN HEMTs instead of Si MOSFETs, the converter efficiency can be increased over a broad range of operating points. Component selection regarding the gate isolation and low parasitics are discussed. The efficiency comparison between the Si and GaN converters shows that a GaN converter can outperform the Si in both soft and hard switching operation points if correctly designed.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130459671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Touch current suppression for semiconductor-based galvanic isolation 基于半导体的电流隔离的触摸电流抑制
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799950
Xuan Zhang, Chengcheng Yao, Pengzhi Yang, Huanyu Chen, He Li, Lixing Fu, Jin Wang
{"title":"Touch current suppression for semiconductor-based galvanic isolation","authors":"Xuan Zhang, Chengcheng Yao, Pengzhi Yang, Huanyu Chen, He Li, Lixing Fu, Jin Wang","doi":"10.1109/WIPDA.2016.7799950","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799950","url":null,"abstract":"This paper presents the touch current (TC) suppression for the semiconductor-based galvanic isolation (SGI) solution. The solution achieves galvanic isolation by utilizing semiconductor switches to deliver differential-mode (DM) power during their ON states, while sustaining common-mode (CM) isolation voltage and blocking CM leakage current during their OFF states. In this solution, TC is resulted as the switch output capacitance is charged by the CM voltage at every switching event, and the TC rises as the switching frequency increases, which limits the system power density. This paper reviews multiple TC-suppression approaches for the SGI to meet the safety standard IEC60950. These approaches include preventing the TC generation, increasing CM impedance, bypassing the TC, and partially reduce the TC. Among them all, it is practical to reduce the TC via partial compensation for the switch output charge, using distributed auxiliary current-source circuits. To verify this approach, a simplified off-line power supply with a SGI-based dc/dc stage is built and tested. The results show the TC can be reduced effectively. It also allows the converter to operate at higher switching frequency to achieve higher power density, while meeting the IEC60950 TC requirement.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"5 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113986051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Analysis on repetitive pulsed overcurrent operation of GaN power transistors GaN功率晶体管重复脉冲过流工作分析
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799967
W. Ray, Matthew Kim, A. Bilbao, J. Schrock, S. Bayne
{"title":"Analysis on repetitive pulsed overcurrent operation of GaN power transistors","authors":"W. Ray, Matthew Kim, A. Bilbao, J. Schrock, S. Bayne","doi":"10.1109/WIPDA.2016.7799967","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799967","url":null,"abstract":"Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A normally-off GaN Systems GS61008P-E03-TY was evaluated in a pulsed ring down circuit at peak currents of up to 230 A over frequencies ranging from 0.5 to 20 Hz. Measurement of switching transient energy dissipation showed minimal difference over cumulative pulse history and pulse frequency. In addition, the device's electrical characteristics, including forward IV and transconductance, were measured throughout testing and revealed no significant degradation. These results demonstrate the GaN FET's robust ability to handle transient pulsed overcurrent conditions common for commercial power semiconductor device applications.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132054828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs 通过对GaN垂直jfet与SiC垂直jfet动态性能的综合讨论，提出了GaN垂直jfet的潜力
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799920
D. Ji, Wenwen Li, S. Chowdhury
{"title":"Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs","authors":"D. Ji, Wenwen Li, S. Chowdhury","doi":"10.1109/WIPDA.2016.7799920","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799920","url":null,"abstract":"In this paper, a comparative study on the switching characteristics and power losses in GaN and SiC vertical junction field effect transistors (VJFETs) is presented. Models of VJFETs based on GaN and SiC, were separately built in Sivaco ATLAS and applied to a mixedmode device/circuit simulator for dynamic evaluation under identical test conditions. The device figure of merit (RonQg) of GaN VJFET is 57% of that for SiC VJFET, showing significantly lower power loss. The switching loss of the GaN VJFET was found to be half that of the SiC device at 100 kHz. From the material point of view, GaN has similar breakdown electric field with SiC, however, the electron mobility in bulk GaN has been experimentally proven to be higher [1] than that in SiC. High mobility enables GaN devices to be operated at high frequency with remarkably lower switching loss.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116608706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip 基于单片集成半桥gan芯片的3mhz软开关变换器
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799940
B. Weiss, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, Alihosein Sepahvand, D. Maksimović
{"title":"Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip","authors":"B. Weiss, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, Alihosein Sepahvand, D. Maksimović","doi":"10.1109/WIPDA.2016.7799940","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799940","url":null,"abstract":"This paper presents switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaN-on-Si technology. The integrated power chip includes two high performance GaN-HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4×4 mm2. Operation of the half-bridge chip is demonstrated in a soft-switching buck converter at switching frequencies up to 3 MHz, input voltages up to 400 V, and output power up to 250 W.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121971052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures 低温下增强模式氮化镓功率场效应晶体管的实验表征
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799923
J. Colmenares, T. Foulkes, C. Barth, Tomas Modeert, R. Pilawa-Podgurski
{"title":"Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures","authors":"J. Colmenares, T. Foulkes, C. Barth, Tomas Modeert, R. Pilawa-Podgurski","doi":"10.1109/WIPDA.2016.7799923","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799923","url":null,"abstract":"High power density converters in combination with cryogenic power systems could have a significant impact on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC gallium-nitride (GaN) power field-effect transistor was evaluated. At −195°C, an 85 % reduction in on-state resistance, and a 16 % increase in threshold voltage were experimentally measured. Moreover, using a double-pulse test, no major changes in switching characteristics were observed. GaN transistors are thus excellent choices for operation at cryogenic temperatures.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131758657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Flip-chip bonded silicon carbide MOSFETs as a low parasitic alternative to wire-bonding 倒装晶片键合碳化硅mosfet作为低寄生替代线键合
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799936
S. Seal, M. Glover, Andrea K. Wallace, H. Mantooth
{"title":"Flip-chip bonded silicon carbide MOSFETs as a low parasitic alternative to wire-bonding","authors":"S. Seal, M. Glover, Andrea K. Wallace, H. Mantooth","doi":"10.1109/WIPDA.2016.7799936","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799936","url":null,"abstract":"This paper presents flip-chip bonding as an alternative to wire-bonding for commercially available silicon carbide (SiC) MOSFETs. A process was developed for the wire-bondless attachment of a SiC power MOSFET onto a substrate. The gate and source bond pads of commercially available MOSFETs are typically made of aluminum to aid the wire bonding process. The process for obtaining a finish suitable for soldering or sintering on these pads is described in this paper. An additional concern during the flip-chip bonding of a MOSFET is the possible shorting of the source and gate pads. The gate and source terminals of the power MOSFET are typically in very close proximity with each other on the die, making the flip-chip process susceptible to the formation of conductive bridges when soldering or sintering. A procedure for addressing this concern is presented. The performance benefits of the flip-chip scheme are analyzed and compared with the traditional wire bonding process through die shear and pull tests.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132189384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Implementation of a digitally controlled SiC CMOS PWM generator using a tunable current-starved delay generator for high-temperature switched-mode regulators 实现了一个数字控制的SiC CMOS PWM发生器，使用可调电流饥渴延迟发生器用于高温开关模式稳压器
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799939
S. Roy, R. C. Murphee, A. Abbasi, A. Rahman, H. Mantooth, J. Di, A. Francis, J. Holmes
{"title":"Implementation of a digitally controlled SiC CMOS PWM generator using a tunable current-starved delay generator for high-temperature switched-mode regulators","authors":"S. Roy, R. C. Murphee, A. Abbasi, A. Rahman, H. Mantooth, J. Di, A. Francis, J. Holmes","doi":"10.1109/WIPDA.2016.7799939","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799939","url":null,"abstract":"This paper describes the design of a SiC pulse width modulation (PWM) signal generator in the HiTSiC® CMOS process from Raytheon Systems Limited. The high-temperature applications of the circuit include motor control in heavy equipment, deep earth drilling, dc-dc voltage converters and power inverters. The results presented in this paper are for the PWM circuit operating with an input clock frequency of 100 kHz and a supply voltage range of 12 to 15 V. The building blocks for the PWM include a current-starved delay generator, a comparator and XNOR gates. The delay is controlled by a 6-bit binary input that allows the user to dynamically tune the duty cycle. Experimental results show the circuit to have a tunable duty cycle between 16.3% and 84.3% at 400°C.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131313344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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