Implementation of a digitally controlled SiC CMOS PWM generator using a tunable current-starved delay generator for high-temperature switched-mode regulators

S. Roy, R. C. Murphee, A. Abbasi, A. Rahman, H. Mantooth, J. Di, A. Francis, J. Holmes
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引用次数: 2

Abstract

This paper describes the design of a SiC pulse width modulation (PWM) signal generator in the HiTSiC® CMOS process from Raytheon Systems Limited. The high-temperature applications of the circuit include motor control in heavy equipment, deep earth drilling, dc-dc voltage converters and power inverters. The results presented in this paper are for the PWM circuit operating with an input clock frequency of 100 kHz and a supply voltage range of 12 to 15 V. The building blocks for the PWM include a current-starved delay generator, a comparator and XNOR gates. The delay is controlled by a 6-bit binary input that allows the user to dynamically tune the duty cycle. Experimental results show the circuit to have a tunable duty cycle between 16.3% and 84.3% at 400°C.
实现了一个数字控制的SiC CMOS PWM发生器,使用可调电流饥渴延迟发生器用于高温开关模式稳压器
本文介绍了雷神系统有限公司的HiTSiC®CMOS工艺中SiC脉宽调制(PWM)信号发生器的设计。该电路的高温应用包括重型设备的电机控制,深土钻井,dc-dc电压变换器和功率逆变器。本文给出的结果是在输入时钟频率为100 kHz,电源电压范围为12至15 V的情况下工作的PWM电路。PWM的构建模块包括一个电流匮乏的延迟发生器,一个比较器和XNOR门。延迟由一个允许用户动态调整占空比的6位二进制输入控制。实验结果表明,该电路在400℃时占空比在16.3% ~ 84.3%之间可调。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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