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2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)最新文献

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VHDL-AMS modelling of multi-chip SiC power modules 多芯片SiC电源模块的VHDL-AMS建模
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799966
O. Olanrewaju, B. Mouawad, A. Castellazzi, R. Kraus
{"title":"VHDL-AMS modelling of multi-chip SiC power modules","authors":"O. Olanrewaju, B. Mouawad, A. Castellazzi, R. Kraus","doi":"10.1109/WIPDA.2016.7799966","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799966","url":null,"abstract":"This paper presents a methodology for modelling of multichip Silicon Carbide (SiC) power modules where multi-domain effects (electrical, thermal, and electromagnetic) in the power module can be accurately observed with minimal computational cost. Commercially available numerical analysis software are capable of showing these effects but there is currently no commercially available software package where effects from one domain (e.g. thermal) can be fed back to affect other domains (e.g. electrical) in real time simulation. In this work, an advanced semiconductor model was created with physics based equations to describe the electrical, thermal and electromagnetic aspects of the model. An algorithm to increase the computational efficiency of the thermal aspect of the model was also presented. The model was then tested in steady state, dynamic and multichip configurations and the results were validated with experiments and simulations from previous work in this field.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123801333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Wide bandgap semiconductor opportunities in power electronics 宽带隙半导体在电力电子领域的机会
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799949
Kristina Armstrong, Sujit Das, J. Cresko
{"title":"Wide bandgap semiconductor opportunities in power electronics","authors":"Kristina Armstrong, Sujit Das, J. Cresko","doi":"10.1109/WIPDA.2016.7799949","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799949","url":null,"abstract":"Wide bandgap (WBG) power electronics is a very small segment of power electronics market (1%) and about 0.05% of the total semiconductor market today. The U.S. has a strong foothold in both the silicon carbide (SiC) and gallium nitride (GaN) markets today, but there exists an increasing competition from Europe, Japan, and China. This work presents market, value chain and energy savings potential analyses for several major application areas: data centers (uninterruptable power supplies (UPS) and server power supply units (PSU), renewable power generation (Photovoltaic (PV)-solar and wind), motor drives, rail traction, and hybrid/electric vehicles. These application areas hold great opportunities for WBG, stemming from increased government efficiency standards and promoting of alternative energy generation and an existing strong supply chain. Major threats to U.S. WBG integration stem from the loss of government assistance, alternative energy saving technologies, and an increasing threat of foreign manufacturers.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121883729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Performance evaluation of direct drive high voltage Gallium-Nitride devices in LLC series resonant converters LLC串联谐振变换器中直接驱动高压氮化镓器件的性能评价
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799911
Sheng-yang Yu
{"title":"Performance evaluation of direct drive high voltage Gallium-Nitride devices in LLC series resonant converters","authors":"Sheng-yang Yu","doi":"10.1109/WIPDA.2016.7799911","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799911","url":null,"abstract":"This paper focuses on performance evaluation of direct drive high voltage Gallium-Nitride (GaN) devices in a high frequency LLC series resonant converter (LLC-SRC). A comparison between synchronous drive and direct drive high voltage (HV) Cascode GaN device has been made. Zero reverse recovery charge and integrated protections make direct drive HV Cascode GaN device attractive to high frequency LLC-SRCs. Dead-time related design considerations of high frequency LLC-SRCs are also discussed. LLC-SRC prototypes using direct drive HV Cascode GaN device have been built. 97.7% peak efficiency is achieved with direct drive HV Cascode GaN device in a 390V to 12V conversion and over 400kHz switching frequency.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122396176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Comparison between 1.7 kV SiC SJT and MOSFET power modules 1.7 kV SiC SJT和MOSFET功率模块的比较
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799903
Gengyao Li, He Li, A. Deshpande, Xiao Li, Longya Xu, F. Luo, Jin Wang
{"title":"Comparison between 1.7 kV SiC SJT and MOSFET power modules","authors":"Gengyao Li, He Li, A. Deshpande, Xiao Li, Longya Xu, F. Luo, Jin Wang","doi":"10.1109/WIPDA.2016.7799903","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799903","url":null,"abstract":"In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection, gate drive design and system level thermal management design. Since the SiC SJT is a new power transistor with unique current driven mechanism. A dedicated section discusses the SiC SJT power module gate drive configuration and device false turn on suppress as well. In a summary, 1.7 kV SiC SJT shows superior on state conductivity, but similar switching performance compared to 1.7 kV SiC MOSFET power modules.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123115177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Topology survey for GaN-based high voltage step-down single-input multi-output DC-DC converter systems 基于氮化镓的高压降压单输入多输出DC-DC变换器系统拓扑研究
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799964
K. George, S. Ang
{"title":"Topology survey for GaN-based high voltage step-down single-input multi-output DC-DC converter systems","authors":"K. George, S. Ang","doi":"10.1109/WIPDA.2016.7799964","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799964","url":null,"abstract":"In this work, several dc-dc converter topologies are examined for GaN-based, single-input, multi-output, large step-down applications; namely 200V∼400V dc distribution systems in modern defense, aeronautical, and datacenter industries. Many critical loads in these larger systems are supplied by 48V, 24V, 12V, or lower voltage sources, requiring a significant step-down of the main dc bus voltage. Due to these large conversion ratios, multi-stage schemes will be considered along with single-stage, multi-output converters. A discussion following analysis of each converter and an update on their current state-of-the-art will shed light on those converters that stand to benefit the most from GaN technology, along with a recommendation for a modular, GaN-based, power electronic building block for such DC-DC conversion applications with preference given to those topologies that lend themselves to modularity, high efficiency, and reduced size.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126304306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electrical safe operating area of low-voltage silicon carbide NMOS transistors 低压碳化硅纳米mos晶体管的电气安全工作区
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799945
Dan Thomas Jarard, Shamim Ahmed, T. Vrotsos, Zhong Chen
{"title":"Electrical safe operating area of low-voltage silicon carbide NMOS transistors","authors":"Dan Thomas Jarard, Shamim Ahmed, T. Vrotsos, Zhong Chen","doi":"10.1109/WIPDA.2016.7799945","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799945","url":null,"abstract":"The trend for wide bandgap high-density power modules is the monolithic integration of low voltage wide bandgap driver circuits with high voltage power devices into a single package to reduce the parasitic from interconnects and increase the power density. With both high voltage and low voltage components in the same package, the protections of integrated circuits and system becomes very challenging. To provide sufficient protections for wide bandgap power module, the electrical safe operating area (SOA) of wide bandgap devices under reliability stress need to be understood. In this paper, the SOAs of the low voltage silicon carbide (SiC) NMOS transistors are first reported. Low voltage (i.e., 15 V) SiC NMOS transistors were fabricated using the high-temperature silicon carbide (HiTSiC) process from Raytheon Systems Limited [1]. The channel length (L) of the devices varies from 0.8 μm to 2 μm. The width (W) of the device changes from 4 μm to 20 μm. The transmission line pulse (TLP) system was used to characterize the devices under short stress pulse (i.e., 100 ns) conditions. The effects of the channel length on the SOA and the current scalability of the SiC NMOS transistors under different gate biases are demonstrated. It is observed that the typical SiC NMOS devices have a failure current (It2) of 0.2 mA/μm for L=1μm without gate bias. The electrostatic discharge (ESD) robustness of the SiC NMOS transistors is also described.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127402642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of nano-diamond composites on low-temperature co-fired ceramic interposer for wide bandgap power electronic module packages 纳米金刚石复合材料对大功率电子模块封装低温共烧陶瓷中间体的影响
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799959
Si Huang, Ziqiang Xu, Fang-li Yu, S. Ang
{"title":"Impact of nano-diamond composites on low-temperature co-fired ceramic interposer for wide bandgap power electronic module packages","authors":"Si Huang, Ziqiang Xu, Fang-li Yu, S. Ang","doi":"10.1109/WIPDA.2016.7799959","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799959","url":null,"abstract":"A 2.5D package with interposer is proposed for wide bandgap (WBG) power modules. Low temperature co-fired ceramic (LTCC) is used for the interposer because its coefficient of thermal expansion (CTE) is closely matched to those of WBG devices as well as its flexibility to have complex structures and through-hole vias built on it. Furthermore, its thermal performance can be enhanced through the addition of through-hole thermal vias. Nano-composite of nano-diamond and silver paste was used as via filled materials in these LTCC interposers. It was found that such interposers with bigger trench vias yielded smaller thermal impedance values while those with circular vias yielded larger thermal impedance values. Scanning acoustic microscopy (SAM) revealed large number of voids in samples with circular vias. As such, besides via filled materials, interposer pattern design, and via dimensions are also crucial in these interposers. Thermal simulations were performed for these interposers and different thermal materials were used and compared.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133169864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Impact of 1.2kV SiC-MOSFET EV traction inverter on urban driving 1.2kV SiC-MOSFET电动汽车牵引逆变器对城市行驶的影响
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799913
Hyeokjin Kim, Hua Chen, Jianglin Zhu, D. Maksimović, R. Erickson
{"title":"Impact of 1.2kV SiC-MOSFET EV traction inverter on urban driving","authors":"Hyeokjin Kim, Hua Chen, Jianglin Zhu, D. Maksimović, R. Erickson","doi":"10.1109/WIPDA.2016.7799913","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799913","url":null,"abstract":"Replacement of an electric vehicle conventional Si-IGBT traction inverter with a SiC-MOSFET inverter can achieve reductions in urban driving cycle average loss by a factor of four, reduction in peak loss by a factor of three, and reduction in semiconductor die area by a factor of two. An 80 kW EV powertrain based on the Nissan LEAF is modeled in MATLAB/Simulink, and EPA standard driving cycles such as UDDS, HWFET, and US06 are simulated. Scenarios of a 600V Si-IGBT inverter based on the Nissan LEAF, a 1200V Si-IGBT inverter based on the Toyota Prius, and a 1200V SiC-MOSFET inverter are designed using currently available devices. A comprehensive loss model including switching and conduction loss is developed and the total loss of the SiC-MOSFET traction inverter over EPA standard driving cycles shows a reduction in urban driving cycle average loss by a factor of four and peak loss by a factor of three, as well as semiconductor die area by a factor of two, relative to the Si-IGBT traction inverter.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115379134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Characterization on latest-generation SiC MOSFET's body diode 新一代SiC MOSFET主体二极管的特性研究
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799947
Xueyu Hou, D. Boroyevich, R. Burgos
{"title":"Characterization on latest-generation SiC MOSFET's body diode","authors":"Xueyu Hou, D. Boroyevich, R. Burgos","doi":"10.1109/WIPDA.2016.7799947","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799947","url":null,"abstract":"This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented. The factors that show effects on reverse recovery behavior in this work are forward conduction currents, junction temperatures, current commutation rates (gate resistors), supply voltages and die sizes. By comparing the CREE's Gen 3 900V 10 mΩ SiC MOSFET with the Gen 2 1200V ones (the main commercial products at present), the improvements in reverse recovery behavior of the Gen 3 900V over the Gen 2 1200V are discussed with several aspects. This work also discusses the junction capacitor and parasitic inductance effects on reverse behavior for SiC MOSFETs and how to clarify their effects in reverse recovery charge calculation.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123847655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates 150mm SiC衬底上1200V SiC平面mosfet的性能和可靠性
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799929
B. Powell, K. Matocha, S. Chowdhury, K. Rangaswamy, C. Hundley, L. Gant
{"title":"Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates","authors":"B. Powell, K. Matocha, S. Chowdhury, K. Rangaswamy, C. Hundley, L. Gant","doi":"10.1109/WIPDA.2016.7799929","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799929","url":null,"abstract":"In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is possible with a common process.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120947991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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