Impact of 1.2kV SiC-MOSFET EV traction inverter on urban driving

Hyeokjin Kim, Hua Chen, Jianglin Zhu, D. Maksimović, R. Erickson
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引用次数: 23

Abstract

Replacement of an electric vehicle conventional Si-IGBT traction inverter with a SiC-MOSFET inverter can achieve reductions in urban driving cycle average loss by a factor of four, reduction in peak loss by a factor of three, and reduction in semiconductor die area by a factor of two. An 80 kW EV powertrain based on the Nissan LEAF is modeled in MATLAB/Simulink, and EPA standard driving cycles such as UDDS, HWFET, and US06 are simulated. Scenarios of a 600V Si-IGBT inverter based on the Nissan LEAF, a 1200V Si-IGBT inverter based on the Toyota Prius, and a 1200V SiC-MOSFET inverter are designed using currently available devices. A comprehensive loss model including switching and conduction loss is developed and the total loss of the SiC-MOSFET traction inverter over EPA standard driving cycles shows a reduction in urban driving cycle average loss by a factor of four and peak loss by a factor of three, as well as semiconductor die area by a factor of two, relative to the Si-IGBT traction inverter.
1.2kV SiC-MOSFET电动汽车牵引逆变器对城市行驶的影响
用SiC-MOSFET逆变器取代传统的电动汽车Si-IGBT牵引逆变器可以实现城市驾驶周期平均损耗降低四倍,峰值损耗降低三倍,半导体芯片面积减少两倍。采用MATLAB/Simulink对日产LEAF 80kw电动汽车动力总成进行建模,并对UDDS、HWFET、US06等EPA标准工况进行仿真。利用现有器件设计了基于日产LEAF的600V Si-IGBT逆变器、基于丰田普锐斯的1200V Si-IGBT逆变器和基于1200V SiC-MOSFET逆变器的场景。开发了包括开关和传导损耗在内的综合损耗模型,并且在EPA标准驱动周期内,SiC-MOSFET牵引逆变器的总损耗显示,相对于Si-IGBT牵引逆变器,城市驱动周期平均损耗减少了四倍,峰值损耗减少了三倍,半导体芯片面积减少了两倍。
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