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A physics-based compact device model for GaN HEMT power devices GaN HEMT功率器件的基于物理的紧凑器件模型
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799919
Ramchandra M. Kotecha, Yuzhi Zhang, A. Rashid, T. Vrotsos, H. Mantooth
{"title":"A physics-based compact device model for GaN HEMT power devices","authors":"Ramchandra M. Kotecha, Yuzhi Zhang, A. Rashid, T. Vrotsos, H. Mantooth","doi":"10.1109/WIPDA.2016.7799919","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799919","url":null,"abstract":"A physics-based analytical compact device model for an enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) lateral power device structure is presented. The model was implemented in the Saber® simulator and the physics-based model parameters are specifically crafted so that they can easily be extracted from dc I-V and C-V data typically available in a datasheet. An 80 V, 90 A (420 A, pulse rated), 2.5 mQ commercial EPC device datasheet is used as an example in this paper to demonstrate the parameter extraction procedure for the compact model. The model has been validated against the turn-on and turn-off characteristics of a commercial EPC GaN device. The model is scalable and can be used for a wide range of commercial GaN devices by using the extraction procedure detailed in this work.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121145644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Physics understanding of high temperature behavior of Gallium Nitride power transistor 氮化镓功率晶体管高温特性的物理认识
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799961
Sizhen Wang, Fei Xue, A. Huang, Siyang Liu
{"title":"Physics understanding of high temperature behavior of Gallium Nitride power transistor","authors":"Sizhen Wang, Fei Xue, A. Huang, Siyang Liu","doi":"10.1109/WIPDA.2016.7799961","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799961","url":null,"abstract":"This paper presents static and dynamic characterization of 100V and 650V Gallium Nitride power transistor from root temperature to 150°C, and a physical explanation of the device on-resistance behavior at elevated temperature was provided. This device physics-based understanding would benefit those application engineers who selects GaN HEMT power transistor to design a robust and energy efficient power electronic system, considering the device degradation in high temperature ambient.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130149715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 3-D stacked wire bondless silicon carbide power module 一种3-D堆叠无线碳化硅功率模块
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799902
A. Dutta, S. Ang
{"title":"A 3-D stacked wire bondless silicon carbide power module","authors":"A. Dutta, S. Ang","doi":"10.1109/WIPDA.2016.7799902","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799902","url":null,"abstract":"A 3-D stacked wire bondless silicon carbide (SiC) power module is proposed to achieve high voltage and current specification. The proposed 3-D stack consists of stand-alone wire bondless power modules stacked on top of each other with a novel interconnection scheme. Each stand-alone wire bondless power module has two SiC power devices connected in parallel to increase its current handling capability. The stand-alone wire bondless power modules are stacked with help of an interposer consisting of an array of low profile spring loaded pins embedded into a low temperature co-fired ceramic (LTCC) along with clamped interconnections to achieve the series connection between the power modules to increase its voltage handling capability. The proposed 3-D stack exhibits lower parasitic inductance compared to traditional wire bonded power modules. In this paper, a comparative investigation between the switching characteristic of the proposed 3-D stacked module to a conventional wire bonded module is performed.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134176541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor 基于耗尽模式逻辑的单输入GaN栅极驱动器与600 V GaN-on- si功率晶体管集成
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799938
S. Moench, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher
{"title":"Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor","authors":"S. Moench, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher","doi":"10.1109/WIPDA.2016.7799938","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799938","url":null,"abstract":"This work presents a monolithically-integrated power circuit with a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology. The gate driver final-stage is a push-pull circuit, in which the pull-up transistor is indirectly driven through a depletion-load logic inverter, whereas the pull-down transistor is directly driven by the single external control input. Measurements of soft- and hard-switching turn-on transitions in an inductive-load half-bridge at 300 V/ 4 A demonstrate controllability of the turn-on speed by adding an external speedup resistor in parallel to the depletion-load. Gate-charge measurements show a 25-fold reduction of external pre-driver drive capability requirement during a 400 V turn-on transition, since the main power transistor gate-charge (8.5 nC)-related losses are provided and dissipated within the GaN power device, and only the pull-down gate driver transistor gate-charge of 0.34 nC has to be provided externally by the pre-driver circuit.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133687629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Analog and digital cell library in high voltage GaN-on-Si Schottky power semiconductor technology 高压GaN-on-Si肖特基功率半导体技术中的模拟和数字单元库
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799933
D. Risbud, K. Pedrotti
{"title":"Analog and digital cell library in high voltage GaN-on-Si Schottky power semiconductor technology","authors":"D. Risbud, K. Pedrotti","doi":"10.1109/WIPDA.2016.7799933","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799933","url":null,"abstract":"Self-heating and application related rapid rise in die temperature of GaN High Electron Mobility Transistors (HEMTs) poses serious reliability risk to the device during operation. To mitigate this risk, there is a need for on-chip device protection before the device reaches overheat condition. A cell library of analog and digital building blocks was designed using only depletion mode HEMTs, Schottky Barrier Diodes (SBDs) and passives in high voltage GaN-on-Si power semiconductor technology. Stand-alone small geometry HEMTs and SBDs, voltage references, comparators, a level shifter, a logic circuit and a proportional to absolute temperature (PTAT) circuit are designed to form the core of a novel monolithically integrated thermal shutdown circuit as a self-protection feature of a 600V power HEMT. Since complementary devices are not yet available in this technology, direct coupled diode transistor logic was used and voltage level shifting was done using diodes. SBDs are exploited to design a PTAT voltage source due to a lack of p-n junction diodes. Functionality of the thermal shutdown circuit was verified through simulation and by fabrication. Here we report the results of the first phase in which the functional building blocks are designed as individual cells. Measurement results demonstrate that each circuit works in agreement with simulation.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126780550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
650 V AllGaN™ power IC for power supply applications 650v AllGaN™电源IC，用于电源应用
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799941
M. Giandalia, Jason Zhang, T. Ribarich
{"title":"650 V AllGaN™ power IC for power supply applications","authors":"M. Giandalia, Jason Zhang, T. Ribarich","doi":"10.1109/WIPDA.2016.7799941","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799941","url":null,"abstract":"The first high voltage Gallium Nitride (GaN) switches to appear in the market were based on depletion-mode HEMT (dMode FET) technology. This requires either a complex gate driver to manage the negative threshold or a low voltage FET in cascode configuration. The lack of direct control of the GaN switch and the need for expensive multichip packaging has delayed the adoption of GaN power stage in off-line applications [1]. As of today, monolithic integration of enhancement-mode GaN HEMT (eMode FET) with driver and logic can offer significant benefits to driving performance, reducing propagation delay, increasing turn-off speed, and reducing switching loss, while using smaller magnetics and capacitors. The AllGaN™power integrated circuit platform increases SMPS switching frequency by an order of magnitude, enabling innovative architectures in soft switching or resonant topologies such as CrCM PFC and LLC, while improving system efficiency and power density.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115534693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
High bandwidth current sensing of SiC MOSFET with a Si current mirror 用硅电流镜检测SiC MOSFET的高带宽电流
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799937
Pengkun Liu, Liqi Zhang, A. Huang, Suxuan Guo, Yang Lei
{"title":"High bandwidth current sensing of SiC MOSFET with a Si current mirror","authors":"Pengkun Liu, Liqi Zhang, A. Huang, Suxuan Guo, Yang Lei","doi":"10.1109/WIPDA.2016.7799937","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799937","url":null,"abstract":"SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates the temperature variation as well. The influence of device mismatching on sensing accuracy are discussed. Optimal selection and trade-off of sensing resistor value are calculated. Discrete device circuit and conceptual DBC-based module are tested to verify the scheme's feasibility and performance. The results show good steady state accuracy and high bandwidth performance.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130239152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model 鳍栅AlGaN/GaN miss - hemt的物理机制:Vth模型
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799960
Kailin Ren, Yung C. Liang, Chih-Fang Huang
{"title":"Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model","authors":"Kailin Ren, Yung C. Liang, Chih-Fang Huang","doi":"10.1109/WIPDA.2016.7799960","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799960","url":null,"abstract":"The physical mechanism of fin-shaped tri-gate AlGaN/GaN Metal Insulator Semiconductor High Electron Mobility Transistors (Fin-MISHEMT) with Al2O3 gate oxide is studied with theoretical model derived and TCAD simulation verified. The relationship between its threshold voltage and fin-width is obtained. The theoretical model of the depletion effect of side gates is based on a two-dimensional Poisson equation of potential, by which to determine the condition when the conduction band is lifted up to the Fermi level. The influences of the thickness and dielectric permittivity of the gate oxide are included in the model. It can be concluded that a narrower fin-width together with a thinner gate oxide is advantageous to a positive shift of threshold voltage. To the best of our knowledge, this is the first time such a physical model is derived which provides design guidelines for normally-off fin-gate AlGaN/GaN MIS-HEMTs.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130411891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Design consideration of high power GaN inverter 大功率GaN逆变器的设计考虑
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799904
He Li, Xiao Li, Zhengda Zhang, Chengcheng Yao, Jin Wang
{"title":"Design consideration of high power GaN inverter","authors":"He Li, Xiao Li, Zhengda Zhang, Chengcheng Yao, Jin Wang","doi":"10.1109/WIPDA.2016.7799904","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799904","url":null,"abstract":"With the rapid development of wide bandgap power transistor technology, the latest gallium-nitride based power transistors are able to be used as the main switches in the high power (≥10 kW) conversion systems. In order to achieve the desired high efficiency and higher power density successfully, the entire GaN based power conversion system needs to take multiple considerations into the design stage. In this paper, a three-phase inverter is used as the example to explain those considerations in detail, including the critical component selection, the system physical layout, the cooling system design, the protection functions design and the EMI control. Based on the proposed design methodology, a 10 kW GaN-based three phase inverter is developed with 98.8% peak efficiency with 0.7 liter box volume.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115142140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
High-temperature passive components for extreme environments 用于极端环境的高温无源元件
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI: 10.1109/WIPDA.2016.7799951
J. Colmenares, Saleh Kargarrazi, H. Elahipanah, H. Nee, C. Zetterling
{"title":"High-temperature passive components for extreme environments","authors":"J. Colmenares, Saleh Kargarrazi, H. Elahipanah, H. Nee, C. Zetterling","doi":"10.1109/WIPDA.2016.7799951","DOIUrl":"https://doi.org/10.1109/WIPDA.2016.7799951","url":null,"abstract":"Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high-temperature performances of different passive components have been studied. Integrated capacitors in bipolar SiC technology have been tested up to 300° C and, three different designs of inductors have been tested up to 700° C.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125632458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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