650 V AllGaN™ power IC for power supply applications

M. Giandalia, Jason Zhang, T. Ribarich
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引用次数: 16

Abstract

The first high voltage Gallium Nitride (GaN) switches to appear in the market were based on depletion-mode HEMT (dMode FET) technology. This requires either a complex gate driver to manage the negative threshold or a low voltage FET in cascode configuration. The lack of direct control of the GaN switch and the need for expensive multichip packaging has delayed the adoption of GaN power stage in off-line applications [1]. As of today, monolithic integration of enhancement-mode GaN HEMT (eMode FET) with driver and logic can offer significant benefits to driving performance, reducing propagation delay, increasing turn-off speed, and reducing switching loss, while using smaller magnetics and capacitors. The AllGaN™power integrated circuit platform increases SMPS switching frequency by an order of magnitude, enabling innovative architectures in soft switching or resonant topologies such as CrCM PFC and LLC, while improving system efficiency and power density.
650v AllGaN™电源IC,用于电源应用
市场上出现的第一个高压氮化镓(GaN)开关是基于耗尽模式HEMT (dMode FET)技术。这需要一个复杂的栅极驱动器来管理负阈值,或者在级联码配置中使用低电压场效应管。缺乏对GaN开关的直接控制以及对昂贵的多芯片封装的需求推迟了GaN功率级在离线应用中的采用[1]。到目前为止,增强型GaN HEMT (eMode FET)与驱动器和逻辑的单片集成可以在使用更小的磁性和电容器的同时,显著提高驱动性能,减少传播延迟,提高关断速度,降低开关损耗。AllGaN™功率集成电路平台将SMPS开关频率提高了一个数量级,实现了软开关或谐振拓扑(如CrCM PFC和LLC)的创新架构,同时提高了系统效率和功率密度。
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