用硅电流镜检测SiC MOSFET的高带宽电流

Pengkun Liu, Liqi Zhang, A. Huang, Suxuan Guo, Yang Lei
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引用次数: 17

摘要

集成高带宽电流传感器的SiC智能电源模块(IPM)是提高器件保护能力和芯片利用率的未来趋势。本文提出了一种基于硅MOSFET电流镜的碳化硅MOSFET功率模块集成电流传感方案,并对其进行了分析和测试。使用硅MOSFET不仅降低了总体成本,而且还补偿了温度变化。讨论了器件失配对传感精度的影响。计算了传感电阻值的最优选择和权衡。对离散器件电路和基于dbc的概念模块进行了测试,验证了方案的可行性和性能。结果表明,该方法具有良好的稳态精度和高带宽性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High bandwidth current sensing of SiC MOSFET with a Si current mirror
SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates the temperature variation as well. The influence of device mismatching on sensing accuracy are discussed. Optimal selection and trade-off of sensing resistor value are calculated. Discrete device circuit and conceptual DBC-based module are tested to verify the scheme's feasibility and performance. The results show good steady state accuracy and high bandwidth performance.
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