Physics understanding of high temperature behavior of Gallium Nitride power transistor

Abstract

This paper presents static and dynamic characterization of 100V and 650V Gallium Nitride power transistor from root temperature to 150°C, and a physical explanation of the device on-resistance behavior at elevated temperature was provided. This device physics-based understanding would benefit those application engineers who selects GaN HEMT power transistor to design a robust and energy efficient power electronic system, considering the device degradation in high temperature ambient.