一种3-D堆叠无线碳化硅功率模块

A. Dutta, S. Ang
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引用次数: 9

摘要

为了满足高电压、高电流的要求,提出了一种三维叠层无线碳化硅(SiC)功率模块。所提出的三维堆叠由独立的无线键合电源模块相互堆叠而成,采用了一种新颖的互连方案。每个独立的无线键合电源模块都有两个SiC电源器件并联连接,以增加其电流处理能力。独立的无线键合功率模块通过嵌入在低温共烧陶瓷(LTCC)中的一系列低姿态弹簧加载引脚以及夹紧的互连组成的中间层进行堆叠,以实现功率模块之间的串联连接,以提高其电压处理能力。与传统的线键合功率模块相比,所提出的三维堆叠具有更低的寄生电感。本文对所提出的三维堆叠模块与传统线键合模块的开关特性进行了比较研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 3-D stacked wire bondless silicon carbide power module
A 3-D stacked wire bondless silicon carbide (SiC) power module is proposed to achieve high voltage and current specification. The proposed 3-D stack consists of stand-alone wire bondless power modules stacked on top of each other with a novel interconnection scheme. Each stand-alone wire bondless power module has two SiC power devices connected in parallel to increase its current handling capability. The stand-alone wire bondless power modules are stacked with help of an interposer consisting of an array of low profile spring loaded pins embedded into a low temperature co-fired ceramic (LTCC) along with clamped interconnections to achieve the series connection between the power modules to increase its voltage handling capability. The proposed 3-D stack exhibits lower parasitic inductance compared to traditional wire bonded power modules. In this paper, a comparative investigation between the switching characteristic of the proposed 3-D stacked module to a conventional wire bonded module is performed.
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