Design consideration of high power GaN inverter

He Li, Xiao Li, Zhengda Zhang, Chengcheng Yao, Jin Wang
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引用次数: 26

Abstract

With the rapid development of wide bandgap power transistor technology, the latest gallium-nitride based power transistors are able to be used as the main switches in the high power (≥10 kW) conversion systems. In order to achieve the desired high efficiency and higher power density successfully, the entire GaN based power conversion system needs to take multiple considerations into the design stage. In this paper, a three-phase inverter is used as the example to explain those considerations in detail, including the critical component selection, the system physical layout, the cooling system design, the protection functions design and the EMI control. Based on the proposed design methodology, a 10 kW GaN-based three phase inverter is developed with 98.8% peak efficiency with 0.7 liter box volume.
大功率GaN逆变器的设计考虑
随着宽禁带功率晶体管技术的飞速发展,最新的氮化镓基功率晶体管可以用作大功率(≥10kw)转换系统的主开关。为了成功地实现所需的高效率和更高的功率密度,整个基于GaN的功率转换系统在设计阶段需要考虑多方面的因素。本文以三相逆变器为例,详细阐述了关键元件的选择、系统的物理布局、冷却系统的设计、保护功能的设计以及电磁干扰的控制。基于所提出的设计方法,开发了10 kW氮化镓型三相逆变器,其峰值效率为98.8%,箱体容积为0.7 l。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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