Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model

Kailin Ren, Yung C. Liang, Chih-Fang Huang
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引用次数: 8

Abstract

The physical mechanism of fin-shaped tri-gate AlGaN/GaN Metal Insulator Semiconductor High Electron Mobility Transistors (Fin-MISHEMT) with Al2O3 gate oxide is studied with theoretical model derived and TCAD simulation verified. The relationship between its threshold voltage and fin-width is obtained. The theoretical model of the depletion effect of side gates is based on a two-dimensional Poisson equation of potential, by which to determine the condition when the conduction band is lifted up to the Fermi level. The influences of the thickness and dielectric permittivity of the gate oxide are included in the model. It can be concluded that a narrower fin-width together with a thinner gate oxide is advantageous to a positive shift of threshold voltage. To the best of our knowledge, this is the first time such a physical model is derived which provides design guidelines for normally-off fin-gate AlGaN/GaN MIS-HEMTs.
鳍栅AlGaN/GaN miss - hemt的物理机制:Vth模型
研究了Al2O3栅极氧化物的鳍形三栅极AlGaN/GaN金属绝缘体半导体高电子迁移率晶体管(Fin-MISHEMT)的物理机理,建立了理论模型并进行了TCAD仿真验证。得到了其阈值电压与鳍片宽度的关系。边栅损耗效应的理论模型是建立在二维泊松势方程的基础上的,以此来确定导带提升到费米能级时的条件。模型中考虑了栅极氧化物的厚度和介电常数的影响。可以得出结论,较窄的鳍片宽度和较薄的栅极氧化物有利于阈值电压的正位移。据我们所知,这是第一次导出这样一个物理模型,它为正常关闭鳍栅AlGaN/GaN mishemt提供了设计指南。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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