{"title":"氮化镓功率晶体管高温特性的物理认识","authors":"Sizhen Wang, Fei Xue, A. Huang, Siyang Liu","doi":"10.1109/WIPDA.2016.7799961","DOIUrl":null,"url":null,"abstract":"This paper presents static and dynamic characterization of 100V and 650V Gallium Nitride power transistor from root temperature to 150°C, and a physical explanation of the device on-resistance behavior at elevated temperature was provided. This device physics-based understanding would benefit those application engineers who selects GaN HEMT power transistor to design a robust and energy efficient power electronic system, considering the device degradation in high temperature ambient.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Physics understanding of high temperature behavior of Gallium Nitride power transistor\",\"authors\":\"Sizhen Wang, Fei Xue, A. Huang, Siyang Liu\",\"doi\":\"10.1109/WIPDA.2016.7799961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents static and dynamic characterization of 100V and 650V Gallium Nitride power transistor from root temperature to 150°C, and a physical explanation of the device on-resistance behavior at elevated temperature was provided. This device physics-based understanding would benefit those application engineers who selects GaN HEMT power transistor to design a robust and energy efficient power electronic system, considering the device degradation in high temperature ambient.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7799961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physics understanding of high temperature behavior of Gallium Nitride power transistor
This paper presents static and dynamic characterization of 100V and 650V Gallium Nitride power transistor from root temperature to 150°C, and a physical explanation of the device on-resistance behavior at elevated temperature was provided. This device physics-based understanding would benefit those application engineers who selects GaN HEMT power transistor to design a robust and energy efficient power electronic system, considering the device degradation in high temperature ambient.
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