S. Moench, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher
{"title":"基于耗尽模式逻辑的单输入GaN栅极驱动器与600 V GaN-on- si功率晶体管集成","authors":"S. Moench, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher","doi":"10.1109/WIPDA.2016.7799938","DOIUrl":null,"url":null,"abstract":"This work presents a monolithically-integrated power circuit with a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology. The gate driver final-stage is a push-pull circuit, in which the pull-up transistor is indirectly driven through a depletion-load logic inverter, whereas the pull-down transistor is directly driven by the single external control input. Measurements of soft- and hard-switching turn-on transitions in an inductive-load half-bridge at 300 V/ 4 A demonstrate controllability of the turn-on speed by adding an external speedup resistor in parallel to the depletion-load. Gate-charge measurements show a 25-fold reduction of external pre-driver drive capability requirement during a 400 V turn-on transition, since the main power transistor gate-charge (8.5 nC)-related losses are provided and dissipated within the GaN power device, and only the pull-down gate driver transistor gate-charge of 0.34 nC has to be provided externally by the pre-driver circuit.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor\",\"authors\":\"S. Moench, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher\",\"doi\":\"10.1109/WIPDA.2016.7799938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a monolithically-integrated power circuit with a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology. The gate driver final-stage is a push-pull circuit, in which the pull-up transistor is indirectly driven through a depletion-load logic inverter, whereas the pull-down transistor is directly driven by the single external control input. Measurements of soft- and hard-switching turn-on transitions in an inductive-load half-bridge at 300 V/ 4 A demonstrate controllability of the turn-on speed by adding an external speedup resistor in parallel to the depletion-load. Gate-charge measurements show a 25-fold reduction of external pre-driver drive capability requirement during a 400 V turn-on transition, since the main power transistor gate-charge (8.5 nC)-related losses are provided and dissipated within the GaN power device, and only the pull-down gate driver transistor gate-charge of 0.34 nC has to be provided externally by the pre-driver circuit.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7799938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
This work presents a monolithically-integrated power circuit with a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology. The gate driver final-stage is a push-pull circuit, in which the pull-up transistor is indirectly driven through a depletion-load logic inverter, whereas the pull-down transistor is directly driven by the single external control input. Measurements of soft- and hard-switching turn-on transitions in an inductive-load half-bridge at 300 V/ 4 A demonstrate controllability of the turn-on speed by adding an external speedup resistor in parallel to the depletion-load. Gate-charge measurements show a 25-fold reduction of external pre-driver drive capability requirement during a 400 V turn-on transition, since the main power transistor gate-charge (8.5 nC)-related losses are provided and dissipated within the GaN power device, and only the pull-down gate driver transistor gate-charge of 0.34 nC has to be provided externally by the pre-driver circuit.