基于耗尽模式逻辑的单输入GaN栅极驱动器与600 V GaN-on- si功率晶体管集成

S. Moench, I. Kallfass, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher
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引用次数: 11

摘要

这项工作提出了一种单片集成电源电路,该电路具有基于耗尽模式逻辑的单控制输入栅极驱动器和GaN-on-Si技术的600 V, 150 mΩ功率HEMT。栅极驱动器末级是推挽电路,其中上拉晶体管通过耗尽负载逻辑逆变器间接驱动,而下拉晶体管由单个外部控制输入直接驱动。在300v / 4a的感应负载半桥中测量软开关和硬开关的导通过渡,通过在耗尽负载上并联一个外部加速电阻,证明了导通速度的可控性。栅极电荷测量显示,在400 V导通过渡期间,外部预驱动驱动能力要求降低了25倍,因为主要功率晶体管栅极电荷(8.5 nC)相关损耗在GaN功率器件内提供和耗散,只有下拉栅极驱动晶体管栅极电荷0.34 nC必须由预驱动电路提供外部。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
This work presents a monolithically-integrated power circuit with a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology. The gate driver final-stage is a push-pull circuit, in which the pull-up transistor is indirectly driven through a depletion-load logic inverter, whereas the pull-down transistor is directly driven by the single external control input. Measurements of soft- and hard-switching turn-on transitions in an inductive-load half-bridge at 300 V/ 4 A demonstrate controllability of the turn-on speed by adding an external speedup resistor in parallel to the depletion-load. Gate-charge measurements show a 25-fold reduction of external pre-driver drive capability requirement during a 400 V turn-on transition, since the main power transistor gate-charge (8.5 nC)-related losses are provided and dissipated within the GaN power device, and only the pull-down gate driver transistor gate-charge of 0.34 nC has to be provided externally by the pre-driver circuit.
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