{"title":"新一代SiC MOSFET主体二极管的特性研究","authors":"Xueyu Hou, D. Boroyevich, R. Burgos","doi":"10.1109/WIPDA.2016.7799947","DOIUrl":null,"url":null,"abstract":"This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented. The factors that show effects on reverse recovery behavior in this work are forward conduction currents, junction temperatures, current commutation rates (gate resistors), supply voltages and die sizes. By comparing the CREE's Gen 3 900V 10 mΩ SiC MOSFET with the Gen 2 1200V ones (the main commercial products at present), the improvements in reverse recovery behavior of the Gen 3 900V over the Gen 2 1200V are discussed with several aspects. This work also discusses the junction capacitor and parasitic inductance effects on reverse behavior for SiC MOSFETs and how to clarify their effects in reverse recovery charge calculation.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Characterization on latest-generation SiC MOSFET's body diode\",\"authors\":\"Xueyu Hou, D. Boroyevich, R. Burgos\",\"doi\":\"10.1109/WIPDA.2016.7799947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented. The factors that show effects on reverse recovery behavior in this work are forward conduction currents, junction temperatures, current commutation rates (gate resistors), supply voltages and die sizes. By comparing the CREE's Gen 3 900V 10 mΩ SiC MOSFET with the Gen 2 1200V ones (the main commercial products at present), the improvements in reverse recovery behavior of the Gen 3 900V over the Gen 2 1200V are discussed with several aspects. This work also discusses the junction capacitor and parasitic inductance effects on reverse behavior for SiC MOSFETs and how to clarify their effects in reverse recovery charge calculation.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7799947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
摘要
本工作评估了CREE第3代900V SiC MOSFET主体二极管在不同条件下的反向恢复行为。作为目前可用的最高电流额定值的分立SiC MOSFET, CREE的Gen 3 900V 10 mΩ SiC MOSFET是这项工作中的主要测试器件(DUT)。给出了被测装置的静态和动态特性。在这项工作中,影响反向恢复行为的因素有正向传导电流、结温、电流换流率(栅极电阻)、电源电压和芯片尺寸。通过比较CREE的第3代900V 10 mΩ SiC MOSFET与第2代1200V(目前主要的商业产品),从几个方面讨论了第3代900V相对于第2代1200V的反向恢复行为的改进。本文还讨论了结电容和寄生电感对SiC mosfet反向行为的影响,以及如何澄清它们在反向恢复电荷计算中的影响。
Characterization on latest-generation SiC MOSFET's body diode
This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented. The factors that show effects on reverse recovery behavior in this work are forward conduction currents, junction temperatures, current commutation rates (gate resistors), supply voltages and die sizes. By comparing the CREE's Gen 3 900V 10 mΩ SiC MOSFET with the Gen 2 1200V ones (the main commercial products at present), the improvements in reverse recovery behavior of the Gen 3 900V over the Gen 2 1200V are discussed with several aspects. This work also discusses the junction capacitor and parasitic inductance effects on reverse behavior for SiC MOSFETs and how to clarify their effects in reverse recovery charge calculation.