150mm SiC衬底上1200V SiC平面mosfet的性能和可靠性

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI:10.1109/WIPDA.2016.7799929

B. Powell, K. Matocha, S. Chowdhury, K. Rangaswamy, C. Hundley, L. Gant

{"title":"150mm SiC衬底上1200V SiC平面mosfet的性能和可靠性","authors":"B. Powell, K. Matocha, S. Chowdhury, K. Rangaswamy, C. Hundley, L. Gant","doi":"10.1109/WIPDA.2016.7799929","DOIUrl":null,"url":null,"abstract":"In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is possible with a common process.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates\",\"authors\":\"B. Powell, K. Matocha, S. Chowdhury, K. Rangaswamy, C. Hundley, L. Gant\",\"doi\":\"10.1109/WIPDA.2016.7799929\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is possible with a common process.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7799929\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

在本文中，我们展示了在大批量150mm Si CMOS铸造厂制造的1200V SiC dmosfet的性能和可靠性。在175℃高温应力测试后，这些dmosfet的阈值电压变化小于10%，击穿特性几乎没有变化。非常大面积的6.30 × 9.45mm2, 11mΩ SiC dmosfet的性能证明了器件缩放是可能的。

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Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates

In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is possible with a common process.

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2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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